软X射线显微术Si_3N_4薄膜窗口的研制

介绍了在软Ｘ－射线显微术研究领域中有重要应用的Ｓｉ_３Ｎ_４薄膜窗口的实验室制作方法，并形成一套独特制备工艺，Ｓｉ_３Ｎ_４薄膜窗口的研制成功推动了我国软Ｘ射线显微术研究的发展。     

Effects of interface between SnO2 thin film and Si substrate on growth time

SnO₂ thin film was grown on Si substrate using the low pressure chemical vapor deposition (LPCVD) method. The SnO₂ thin film was grown in the direction of (110) as deposition time increased. The atomic ratio of O decreased by 62.4, 57.6, and 45.6%, and the thickness of the thin film increased to 0.2, 0.3, and 0.7 ? as the deposition time increased to 10, 20, and 30 min, respectively. The interface of the thin film was examined using high-resolution transmission electron microscope (HRTEM) and energy dispersive spectroscopy (EDS) analysis. The SiO₂ layer was observed at between the SnO₂ thin film and the Si substrate. This layer decreased in thickness as the deposition time increased, which indicates that the deposition time affected the interface of the thin film.     

Assessment of conservative weighting scheme in simulating chemical vapour deposition with trace species

Low‐pressure or ultra‐high vacuum chemical vapour deposition often involves important trace species in both gas‐phase and surface reactions. The conservative weighting scheme (J. Thermophys. Heat Transfer 1996; 10 (4) : 579) has been used to deal with the trace species often involved in some non‐reactive physical processes, which is otherwise considered computationally impossible using the conventional DSMC method. This conservative weighting scheme (CWS) improves greatly the statistical uncertainties by decreasing the weighting factors of trace‐species particles and ensures the conservation of both momentum and energy between two colliding particles with large difference of weighting factors. This CWS is further extended to treat reactive processes for gas‐phase and surface reactions with trace species, which is called extended conservative weighting scheme (ECWS). A single‐cell equilibrium simulation is performed for verifying both the CWS and ECWS in treating trace species. The results of using CWS show that it is most efficient and accurate for weight ratio (trace to non‐trace) equal to or less than 0.01 for flows with two and three species. The results of a single‐cell simulation using ECWS for gas‐phase reaction and surface reactions show that only ECWS can produce acceptable results with reasonable computational time. Copyright © 2003 John Wiley & Sons, Ltd.     

Morphology engineering and etching of graphene domain by low-pressure chemical vapor deposition

Controlled growth of single-crystal high-quality ‘track-and-field ground’ shaped graphene domains and the morphological evolution from hexagonal to hexagram graphene domain even square and circular graphene domain has been achieved by low-pressure CVD on solid copper substrate, thereby demonstrating that the shape of the graphene grains can potentially be precisely tuned by optimizing growth parameters. The etching reaction of graphene has also been studied, and results show that a low flow rate of hydrogen (99.999%) is favorable to form hexagonal structure for the etching reaction of graphene due to the exist of oxygen or oxidizing impurities in hydrogen gas commonly used. Controlled growth and etching reaction of graphene determine the final shape of graphene domains and all these efforts contribute to the study of size and morphology and the growth mechanism of graphene domains.     

LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性

利用电子自旋共振波谱（ESR）仪,分析由低压化学气相沉积（LPCVD）法制备的高纯半绝缘4H-SiC材料本征缺陷.结果发现,在暗场条件下获得的缺陷信息具有碳空位（V_C）及其络合物的特征;谱线具有半高宽较大、峰谷明显不对称的特点.分析认为造成ESR谱线半高宽较大及峰谷不对称现象的主要原因是测试温度较高.同时,吸收谱中峰谷不对称现象及较大半高宽现象的出现还与不对称的晶格结构及缺陷浓度的不均匀分布有关.在110 K测试温度下,能级上的电子分布对ESR谱特性影响很小. 关键词： 低压化学气相沉积 高纯半绝缘4H-SiC 电子自旋共振 本征缺陷     

Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD

Cubic SiC (3C-SiC) films were deposited on on-axis 6H-SiC (0001) substrates by low-pressure chemical vapor deposition (LPCVD). The result of X-ray diffraction patterns shows that the 3C-SiC films were of good crystalline quality. The influence of the growth parameters (flow rates of the gas sources and growth temperature) on the growth rate of the SiC films is discussed. The results show that the transport of silane or its reaction products is the limiting factor for the growth. The surface morphology of the SiC films was observed by atomic force microscope imaging. From these results it can be concluded that the growth of the films is in agreement with a Stranski-Krastanov growth mode.     

The impacts of LPCVD wrap-around on the performance of n-type tunnel oxide passivated contact c-Si solar cell

In this paper, Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells with the industrial area (244.32 cm²) are fabricated on N-type silicon substrates. Both the ultra-thin tunnel oxide layer and phosphorus doped polycrystalline silicon (polysilicon) thin film are prepared by the LPCVD system. The wrap-around of polysilicon is observed on the surface of borosilicate glass (BSG). The polysilicon wrap-around can form a leakage current path, thus degrades the shunt resistance of solar cells, and leads to the degradation of solar cell efficiency. Different methods are adopted to treat the polysilicon wrap-around and improve shunt resistance of solar cells. The experimental results indicate that a chemical etching method can effectively solve the problem of polysilicon wrap-around and improve the performance of solar cells. Finally, a conversion efficiency of 22.81% has been achieved by our bifacial TOPCon solar cells, with V_oc of 702.6 mV, J_sc of 39.78 mA/cm² and FF of 81.62%.     

TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing

The use of SiO₂/4H–SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) can be problematic due to high interface state density (D_it) and low field-effect mobility (μ_fe). Here, we present a tetra-ethyl-ortho-silicate (TEOS)-based low-pressure chemical vapor deposition (LPCVD) method for fabricating the gate oxide of 4H–SiC MOSFETs using nitric oxide post-deposition annealing. SiO₂/4H–SiC MOS capacitors and MOSFETs were fabricated using conventional wet and TEOS oxides. The measured effective oxide charge density (Q_eff) and D_it of the TEOS-based LPCVD SiO₂/4H–SiC MOS capacitor with nitridation were 4.27 × 10¹¹ cm⁻² and 2.99 × 10¹¹ cm⁻²eV⁻¹, respectively. We propose that the oxide breakdown field and barrier height were dependent on the effective Q_eff. The measured μ_fe values of the SiO₂/4H–SiC MOSFETs with wet and TEOS oxides after nitridation were, respectively, 11.0 and 17.8 cm²/V due to the stable nitrided interface between SiO₂ and 4H–SiC. The proposed gate stack is suitable for 4H–SiC power MOSFETs.     

Low Pressure Chemical Vapor Deposition of III/V-Nitrides Using Organometallics and Hydrazoic Acid Precursors

In and Ga nitride films have been deposited on various substrates using organometallics and hydrazoic acid (HN₃) as nitrogen precursor. The film deposition was carried out under low pressure (10^?510 ^?6 Torr) and low V/III ratios (1-10). XPS analysis indicated that the ln(Ga):N atomic ratio of unity can be easily achieved by adjusting the experimental conditions. For the growth of InN on Si(100) substrate, 308-nm photon beam is needed to speed up the film deposition rate. He(II) UPS spectra of InN films are in good agreement with the result of a pseudo-potential calculation for InN valence band, while the spectra of GaN compare favorably with a recent semi-ab-initio calculation and with the UPS results of GaN single crystal films. The bandgap of our GaN films is ～ 3.3 cV as determined by photoluminescence and UV-VIS absorption spectra. Raman spectra taken from GaN Films showed peaks at 66 and 88 meV for TO and LO phonons, respectively, indicating a wurtzite structure of the GaN. In a corresponding X-ray diffraction spectrum, the (002) peak is about 400 times more intense than that of the (101) peak, suggesting that the GaN layers are highly oriented with the c-axis normal or nearly so to the Al₂O₃ substrate.     

Room-temperature SiGe light-emitting diodes

In the present paper the electroluminescence of PIN diodes with either strained SiGe/Si or Ge islands in the i-region has been investigated experimentally and by quantitative modelling. The modelling helped to improve the diode structure. Consequently, diodes with strained Si_0.80Ge_0.20 could be improved so as to reveal emission up to room temperature, if the thickness was high enough. To overcome the thickness limitation due to plastic relaxation, we used selective epitaxy on small areas. We also present results for diodes with Ge islands in the active region. The internal quantum efficiency of light emitting diodes with strained SiGe was at room temperature 10⁻⁴, while diodes with islands emitted ten times less light.