Precision Graphene Nanoribbon Heterojunctions by Chain-Growth Polymerization

Graphene nanoribbons (GNRs) are considered promising candidates for next-generation nanoelectronics. In particular, GNR heterojunctions have received considerable attention due to their exotic topological electronic phases at the heterointerface. However, strategies for their precision synthesis remain at a nascent stage. Here, we report a novel chain-growth polymerization strategy that allows for constructing GNR heterojunction with N=9 armchair and chevron GNRs segments ( 9-AGNR/cGNR ). The synthesis involves a controlled Suzuki–Miyaura catalyst-transfer polymerization (SCTP) between 2-(6′-bromo-4,4′′-ditetradecyl-[1,1′:2′,1′′-terphenyl]-3′-yl) boronic ester ( M1 ) and 2-(7-bromo-9,12-diphenyl-10,11-bis(4-tetradecylphenyl)-triphenylene-2-yl) boronic ester ( M2 ), followed by the Scholl reaction of the obtained block copolymer ( poly-M1/M2 ) with controlled M_n (18 kDa) and narrow Đ (1.45). NMR and SEC analysis of poly-M1/M2 confirm the successful block copolymerization. The solution-mediated cyclodehydrogenation of poly-M1/M2 toward 9-AGNR/cGNR is unambiguously validated by FT-IR, Raman, and UV/Vis spectroscopies. Moreover, we also demonstrate the on-surface formation of pristine 9-AGNR/cGNR from the unsubstituted copolymer precursor, which is unambiguously characterized by scanning tunneling microscopy (STM).     

Engineering Graphdiyne for Solar Photocatalysis

Graphdiyne (GDY) with a direct band gap, excellent carrier mobility and uniform pores, is regarded as a promising photocatalytic material for solar energy conversion, while the research on GDY in photocatalysis is a less developed field. Herein, the distinctive structure, adjustable band gap, and electronic properties of GDY for photocatalysis is firstly summarized. The construction and progress of GDY-based photocatalysts for solar energy conversion, including H₂ evolution reaction (HER), CO₂ reduction reaction (CO₂RR) and N₂ reduction reaction (NRR) are then elaborated. At last, the challenges and perspectives in developing GDY-based photocatalysts for solar fuel production are discussed. It is anticipated that a timely Minireview will be helpful for rapid progress of GDY in solar energy conversion.     

Recent advances in bismuth vanadate-based photocatalysts for photoelectrochemical water splitting

Photoelectrochemical(PEC) technology is considered to be a promising approach for solar-driven hydrogen production with zero emissions. Bismuth vanadate(BiVO_4) is a kind of photocatalytic material with strong photoactivity in the visible light region and appropriate band gap for PEC water splitting.However, the solar-to-hydrogen efficiency(STH) of BiVO_4 is far away from the 10% target needed for practical application due to its poor charge separation ability. Therefore, this review attempts to summarize the strategies for improving the photocurrent density and especially hydrogen production of BiVO_4 materials through PEC techniques in the last three years, such as doping nonmetal and metal elements, depositing noble metals, constructing heterojunctions, coupling with carbon and metalorganic framework(MOF) materials to further enhance the PEC performance of BiVO_4 photoanode. This review aims to serve as a general guideline to fabricate highly efficient BiVO_4-based materials for PEC water splitting.     

Bi_2WO_6/Bi-TiO_2复合光催化剂的制备及催化氧化甲醛性能研究

研究采用水热法制备了花状Bi_2WO_6与TiO_2和Bi-TiO_2相复合的光催化剂,并使用新型LED节能灯为光源催化氧化室内甲醛.研究发现,粉末态Bi_2WO_6显示出花状结构,但无光催化氧化活性,而将Bi_2WO_6粉末与TiO_2和Bi-TiO_2复合后,两者相互作用所形成异质结结构形态,尤其Bi_2WO_6/Bi-TiO_2催化剂,所制样品展示出更佳的催化氧化活性,而经浸渍法所得样品几乎无光催化氧化活性,催化剂随着TiO_2和Bi-TiO_2含量的增加,复合催化剂显现出不尽相同的氧化活性规律,其中Bi_2WO_6与Bi-TiO_2质量比为1∶2样品表现最佳,36 h催化氧化甲醛转化率高达92.2%,甲醛浓度低于我国居室空气中甲醛最高容许浓度,且催化剂显示出良好的稳定性及重复性.     

Intermixing at the interface of the system Nb/Fe(1 1 0) investigated by STM

The growth of niobium on the Fe(1 1 0) surface at a deposition temperature between room temperature (RT) and 680 K was studied using in situ STM and LEED. At RT we observe no indication of intermixing. Although a final roughness of only 1.7 Å is reached, the crystalline quality is low. At elevated growth temperatures the development of a surface alloy was observed, whose formation is ascribed to an exchange mechanism through which Nb adatoms are incorporated into the Fe surface. These Nb atoms arrange themselves in chains along the [0 0 1] direction. The expelled Fe atoms form islands on the Nb/Fe-alloy substrate. At higher coverage additionally a Nb wetting layer and intermixed 3D islands evolve.     

A model for single heterostructure field effect transistors

Single heterostructure field effect transistors are studied within a proposed analytical model for the heterostructure conduction band potential profile. An expression for the bias potential closing the conduction channel between drain and source is derived as a function of growth parameters and bias. In particular we study a field effect transistor based on Al_xGa_1−xN/GaN. The quantum well potential is modelled along the lines of the local density Thomas-Fermi approximation with the inclusion of exchange effects. Recent experimental results on two-dimensional electron gas density in this kind of systems are explained.     

The electronic structure of the interface between thin conjugated oligomer films and inorganic substrates with different work function

In this work, a comparison of the interfacial electronic properties between a semiconducting oligomer and a variety of substrates with different properties—metal, semiconductor and oxide layers—is reported. The interface formation was studied by X-ray and Ultraviolet photoelectron spectroscopies (XPS, UPS). High purity oligomer films with thickness up to 10 nm were prepared by stepwise evaporation on the clean substrates under ultrahigh vacuum (UHV) conditions. Analysis of the oligomer and substrate related XPS spectra clarified the interfacial chemistry and band bending in the semiconducting materials. The valence band structure and the interfacial dipoles were determined by UPS. The barriers for hole injection were measured at the interfaces of the organic film with all substrates. The interfacial energy band diagrams were deduced in all cases from the combination of XPS and UPS results. Emphasis was given on the influence of the substrate work function (eΦ) on the electronic properties of these interfaces.     

Molecular beam epitaxy

Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals. It was first applied to the growth of compound semiconductors. That is still the most common usage, in large part because of the high technological value of such materials to the electronics industry. In this process beams of atoms or molecules in an ultra-high vacuum environment are incident upon a heated crystal that has previously been processed to produce a nearly atomically clean surface. The arriving constituent atoms form a crystalline layer in registry with the substrate, i.e., an epitaxial film. These films are remarkable because the composition can be rapidly changed, producing crystalline interfaces that are almost atomically abrupt. Thus, it has been possible to produce a large range of unique structures, including quantum well devices, superlattices, lasers, etc., all of which benefit from the precise control of composition during growth. Because of the cleanliness of the growth environment and because of the precise control over composition, MBE structures closely approximate the idealized models used in solid state theory.

This discussion is intended as an introduction to the concept and the experimental procedures used in MBE growth. The refinement of experimental procedures has been the key to the successful fabrication of electronically significant devices, which in turn has generated the widespread interest in the MBE as a research tool. MBE experiments have provided a wealth of new information bearing on the general mechanisms involved in epitaxial growth, since many of the phenomena initially observed during MBE have since been repeated using other crystal growth processes. We also summarize the general types of layered structures that have contributed to the rapid expansion of interest in MBE and its various offshoots. Finally we consider some of the problems that remain in the growth of heteroepitaxial structures, specifically, the problem of mismatch in lattice constant between layers and between layer and substrate. The discussion is phenomenological, not theoretical; MBE has been primarily an experimental approach based on simple concepts.     

Diffusion and ballistic contributions of electron-electron interaction to the conductivity in an Al0.26Ga0.74N/AlN/GaN heterostructure

The results of an experimental study of quantum correction of electron-electron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.     

Electrical and microscopic characterization of ZnO films on p-SiC substrates

ZnO/p- SiC heterojunctions were fabricated by thermal evaporation from ZnO high quality powder (99.99%) onto 4H and 6H p-SiC polytypes. We find that, despite the low cost technique employed for the deposition of the ZnO film, the devices exhibited breakdown voltages in excess of 100 V, high rectification ratio (forward to reverse current ratio, I_F/I_R) and low leakage current, respectively, 2×10⁵ and 4.5×10⁻⁷ A/cm² (for the 4H p-SiC based device) and 5×10⁴ and 5×10⁻⁷ A/cm² (for the 6H p-SiC based device). The current-voltage (I×V) characteristics were also measured at the nanometer scale by means of conductive atomic force microscopy. A simple Schottky diode model and conductance divided by current versus conductance plots (G/I×G plots) was used to analyze device characteristics. This analysis shows that, when probing at the nanometric scale, fluctuations of the effective barrier height and/or surface states across individual grains or grain boundaries cause deviations from linear G/I×G plots. These fluctuations are smeared out when probing at the macroscale and thus it becomes possible to obtain linear plots and extract diode parameters.