Electron Holography of Barrier Structures in Co／ZrAlOx／Co Magnetic Tunnel Junctions

We investigate the potential profiles and elemental distribution of barriers in Co/ZrAlOx/Co magnetic tunnel junctions (MTJs) using electron holography (EH) and scanning transmission electron microscopy. The MTJ barriers are introduced by oxidizing a bilayer consisting with a uniform 0.45-nm Al layer and a wedge-shaped Zr layer (0-2 nm). From the scanning transmission electron microscopy, AlOx and ZrOx layers are mixed together, indicating that compact AlOx layer cannot be formed in such a bilayer structure of barriers. The Eli results reveal that there are no sharp interfaces between the barrier and magnetic electrodes, which may be responsible for a smaller tunnelling magnetoresistance compared with the MTJs of Co/AlOx/Co.     

Synthesis, Crystal Structure, Fluorescent and Thermal Properties of Sodium Tridecafluorodizirconate Na_5Zr_2F_(13) Compound

1 INTRODUCTION Considerable research effort on the heavy metal fluoride glasses like barium, zirconium fluoride and a series of rare-earth fluorozirconate compounds du- ring the last two decades was initiated by the broad optical transmission window of these glasses and thereby the potential for ultralow-loss optical fi- bers[1~10]. The fluorozirconate of alkali metals was first reported in 1938[11], and most of the sodium and potassium fluorozirconates were reported amongthe 1940s and 19…     

非晶Zr—Co的超导转变

测量了非晶态过渡族 Zr_(100-x)Co_x(x=20—41)合金的超导转变温度 T_c、上临界场 B_(c2)(T)和临界电流密度 J_c(H,T).T_c 随着 Co 含量 x 增加而线性地降低.上临界场 B_(c2)(T)的测量数值符合标准的 WHH 理论.电子状态密度和电子比热系数都随着 Co 含量 x 增加而降低.临界电流密度 J_c(H,T)和磁通钉扎力 F_p,相当弱,可以归因于在相干长度尺度上的结构均匀性.     

^95Zr核的高自旋态研究

利用102MeV的^28Si束流，通过^60Ni(^28Si，2pn)熔合蒸发反应布居了^85Zr核的高自旋态，测量了γ-γ符合及DCO比值，建立了一个有43条能级，75条γ跃迁的能级纲图，新增加了36条γ跃迁，25条能级。将能级自旋推高到（49/2^ ），首次观察到了转边带的第二回弯。并确认了一条建立在17/2^-负字称带上的磁转动带。