Propagation of mesons in asymmetric nuclear matter in a density-dependent coupling model

We study the propagation of the light mesons σ,ω,ρ, and a₀(980) in dense hadronic matter in an extended derivative scalar coupling model. Within the scheme proposed it is possible to unambiguously define effective density-dependent couplings at the Lagrangian level. We first apply the model to study asymmetric nuclear matter with fixed isospin asymmetry, and then we pay particular attention to hypermatter in β-equilibrium. The equation of state and the potential contribution to the symmetry coefficient arising from the mean-field approximation are investigated. Received: 16 October 2001 / Accepted: 10 January 2002     

Numerical Simulation of the Elastic Shrinkage Induced by Portevin-Le Chatelier Effect

A new one-dimensional phenomenological model based on the dynamic strain aging mechanism is developed. In order to account for the elastic shrinkage induced by the Portevin-Le Chatelier effect, elastic deformation is considered under the boundary conditions of the present model. The simulated results are found to be in good agreement with the experimental observations.     

Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures

x Si_1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines the ionized boron solubilities in Ge_xSi_1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I⁺ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I⁺ and solubility of B in the region and hence controls B diffusion across the heterojunction. Received: 20 August 1998/Accepted: 23 September 1998     

Modeling of Cu gettering in p- and n-type silicon and in poly-silicon

Based on experimental findings we set up calculations of numerical modeling of gettering efficiencies for Cu in various silicon wafers. Gettering efficiencies for Cu were measured by applying a reproducible spin-on contamination in the 10¹² atoms/cm² range, followed by a thermal treatment to redistribute the metallic impurity. Subsequently, the wafers were analyzed by a novel wet chemical layer-by-layer etching technique in combination with inductively coupled plasma mass spectrometry. We investigated p/p+ and n/n+ epitaxial wafers with different doping levels and different substrate-doping species. We have also investigated gettering efficiencies of phosphorus-diffused p- and n-type wafers. Heavilyboron doped silicon exhibited a gettering efficiency of ∼100%, while gettering by n+ silicon occurred for doping levels >3×10¹⁹ atoms/cm³ only. In another set of experiments we investigated the dependence of the gettering efficiency of p-type wafers with poly-silicon back sides for different cooling rates and Cu spiking levels. A strong dependence on both parameters was found. Cu gettering in p/p+ epitaxial wafers was modeled by calculating the increased solubility of Cu in p+ silicon compared to non-doped silicon taking into account the Fermi-level effect, which stabilizes donors in p+ silicon, and the pairing reaction between Cu and B. Calculated gettering efficiencies were in very good agreement with experimental results. Gettering in n+ silicon was similarly modeled in terms of pairing reactions and the Fermi-level effect. But, for n-type silicon, many experimental uncertainties existed; thus, we applied our expressions to solubility data of Hall and Racette to obtain the unknown parameters. The empirical calculations were in good agreement even with results on n/n+ wafers. For phosphorus-diffused wafers we had to consider an excess vacancy concentration of 1.2–5.5 times the equilibrium concentration to explain the experimental findings by the model. Gettering by poly-silicon back sides was simulated by solving the time-dependent diffusion equation with boundary conditions that take into account different surface reaction rates of silicon point defects. Using this advanced model, the experimentally measured gettering efficiencies were reproduced within the uncertainty of the measurement. Received: 3 September 2001 / Accepted: 4 September 2001 / Published online: 20 December 2001     

Thermodynamic properties of the SU(2)f chiral quark–loop soliton

We consider a chiral one-loop hedgehog soliton of the bosonized SU(2)_f Nambu & Jona-Lasinio model which is embedded in a hot medium of constituent quarks. Energy and radius of the soliton are determined in self-consistent mean-field approximation. Quasi-classical corrections to the soliton energy are derived by means of the pushing and cranking approaches. The corresponding inertial parameters are evaluated. It is shown that the inertial mass is equivalent to the total internal energy of the soliton. Corrected nucleon and δ isobar masses are calculated in dependence on temperature and density of the medium. As a result of the self-consistently determined internal structure of the soliton the scaling between constituent quark mass, soliton mass and radius is noticeably disturbed. Received: 26 September 1997     

Δ -resonances: Quark models, chiral symmetry and AdS/QCD

The mass spectrum of Δ -resonances is compared to predictions based on three quark-model variants, to predictions assuming that chiral symmetry is restored in high-mass baryon resonances, and to predictions derived from AdS/QCD. The latter approach yields a nearly perfect agreement when the confinement property of QCD is modeled by a soft wall in AdS.     

Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

The minority carrier lifetime of as-grown germanium-doped Czochralski （GCZ） silicon wafers doped with germanium concentrations [Ge]=10^16-10^18 cm^-3 is investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of[Ge]. There is a critical value of [Ge] = 10^16 cm^-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors （TDs） and electrically active Ge-related complexes. The related formation mechanisms and distributions are also discussed.     

A relativistic quark model for mesons with an instanton-induced interaction

We present new results of a relativistic quark model based on the Bethe-Salpeter equation in its instantaneous approximation. Assuming a linearly rising confinement potential with an appropriate spinorial structure in Dirac space and adopting a residual interaction based on instanton effects, we can compute masses of the light mesons up to highest observed angular momenta with a natural solution of the U _A(1) problem. The calculated ground states masses and the radial excitations describe the experimental results well. In this paper, we will also discuss our results concerning numerous meson decay properties. For processes like π⁺/K ⁺↦e ⁺υ_eγ and 0^-↦γγ at various photon virtualities, we find a good agreement with experimental data. We will also comment on the form factors of the K _?3 decay and on the decay constants of the π, K and η mesons. For the sake of completeness, we will furthermore present the electromagnetic form factors of the charged π and K mesons as well as a comparison of the radiative meson decay widths with the most recent experimental data. Received: 28 August 2000 / Accepted: 12 September 2000     

Nucleon form factors in a relativistic quark model

Electromagnetic form factors of protons and neutrons are investigated based on a relativistic quark model with the inclusion of a pion cloud. Pseudo-scalar π-quark interaction is employed to study the coupling between the nucleon and the π. The results show the important role of the pion cloud for the neutron charge form factor. Moreover, our numerical analysis indicates a difference between the relativistic and the nonrelativistic treatments. Received: 10 March 1999 / Revised version: 14 June 1999     

Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species Si_Ga ⁺ and as shallow acceptor species Si_As ^-. The solubility of Si_As ^- is much lower than that of Si_Ga ⁺ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is Si_Ga ⁺ which will convert into Si_As ^- in accordance with their solubilities and that the point defect species governing the diffusion of Si_Ga ⁺ are triply-negatively-charged Ga vacancies V_Ga ^3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n⁺-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently. Received: 19 April 1999 / Accepted: 3 May 1999 / Published online: 4 August 1999