离子束增强沉积VO2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明，薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好，薄膜的电阻温度系数（TCR）最高可达4.23%/K.从成膜机理出发，较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为，单一取向的VO2结构使薄膜晶粒具有较高的电导激活能，致密的薄膜结构减少了氧空位和晶界宽度，使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词： VO2多晶薄膜 离子束增强沉积 热电阻温度系数     

溶胶-凝胶VO2薄膜转换特性研究

利用溶胶凝胶法在SiO2Si衬底上沉积高取向的V2O5薄膜,在压强低于2Pa,温度高于400℃的条件下,对V2O5薄膜进行真空烘烤,获得了电阻率变化3个数量级以上、弛豫宽度为62℃的VO2多晶薄膜.以X射线衍射(XRD)、扫描电子显微镜(SEM)图和电阻率转换特性等实验结果为依据,详细分析了溶胶凝胶薄膜在真空烘烤时从V2O5向VO2的转化,它经历了从VnO2n+1(n=2,3,4,6)到VO2的过程.实验证明,根据选择合适的成膜热处理条件和真空烘烤条件是实现溶胶凝胶V2O5结构向VO2结构成功转换的关键 关键词： 溶胶-凝胶法 氧化钒薄膜 VO2膜转换特性     

Effects of Alkali Metal Doping and γ-Irradiation on the Crystallization Kinetics of the Glass Ag7I4VO4

The crystallization kinetics of the γ-irradiated and the unirradiated glass Ag7I4VO4 was studied dynamically by means of DTA, and isothermally via electrical conductivity measurements. The influence of doping with alkali metal ions (Li+, Na+, K+, Rb+ or Cs+) on the crystallization process in the glass was also investigated. The results showed that the rate of crystallization depends on the nature of the added metal ion and on the crystallization growth mechanism. The latter is a two-dimensional process for both the pure and the alkali metal-doped glasses. The effects of irradiation and additive ions on the crystallization process are discussed. This revised version was published online in July 2006 with corrections to the Cover Date.     

VO（Ⅱ）—组氨酸—π受体三元混配配合物的ESR波谱

钒的氨基酸配合物具有重要的生物和医学意义。VO(Ⅱ)-组氨酸配合物及VO(Ⅱ)-π受体二元配合物的ESR研究已有报道。但是VO(Ⅱ)-氨基酸-π受体三元配合物的结构及其ESR研究至今未见报道。本文考察了VOSO_4与组氨酸(His)和邻菲啰啉(Phen)及α,α′-联吡啶(bipy)三元体系在不同酸度(pH=1～14)的乙二醇/水(1:1)溶液中低温(173K)ESR波谱,获得了不同pH条件下配合情况的详细信息。     

Coordination of solvent molecules to VO(acac)<Subscript>2</Subscript> complexes in solution studied by hyperfine sublevel correlation spectroscopy and pulsed electron nuclear double resonance

Interactions and binding sites of the solvent molecules chloroform and ethanol to bis(acetylacetonate)oxovanadium(IV) (VO(acac)₂) complexes in (frozen) solutions have been investigated by pulsed electron nuclear double resonance, sum peak electron spin echo envelope modulation and hyperfine sublevel correlation spectroscopy. The experimental proton hyperfine coupling data of coordinating solvent molecules have been interpreted using quantum chemical calculations (density functional theory). Experimental and computed hyperfine couplings indicate that ethanol coordinates to vanadium in the equatorial plane of VO(acac)₂ and chloroform interacts via hydrogen bonding to oxygens of the acac ligands.     

(enH_2)_4Na_4H_3[(VO)_(12)O_6B_(18)O_(42)]·8H_2O的水热合成和晶体结构

在水热的条件下合成了多钒硼酸盐(enH2)4Na4H3[(VO)12O6B18O42]8H2O, 化学式为C8H59B18N8Na4O68V12 (Mr=2253.45), 用单晶X射线衍射方法测定了它的结构, 该晶体属单斜晶系, P21/n空间群, 晶胞参数为a = 13.8989(4), b = 16.1954(5), c = 14.4520(4) ?β = 94.7490(5), V= 3241.95(16) ?, Z = 2, Dc = 2.308 g/cm3, ?= 1.819mm-1, F(000) = 2234, 4798个可观察衍射点(I > 2s(I)), 最终结构精修到偏离因子R = 0.0449, wR = 0.1163, S = 0.996。在该化合物的结构中, V12B18簇是由环状的B18O42通过18个B(μ3-O)V键被2个V6O18环夹在中间组成的, V12B18簇通过4个Na+与相邻的簇相连, 形成二维网状结构, 孔道尺寸为6.109×10.562 拧?     

用于红外激光防护的高开关率VO2薄膜

采用反应离子束溅射和后退火处理技术在石英玻璃基底上制备了具有纳米粒子的二氧化钒(VO₂)薄膜. 该薄膜具有半导体-金属相变特性,在3 μm处的开关率达到76.6%。 热致相变实验结果给出了准确的最佳退火温度为465 ℃. 仿真、热致相变和光致相变实验都显示VO₂薄膜在红外波段具有很高的光学开关特性. 光电池防护实验结果显示VO₂薄膜将硅光电池的抗干扰能力提升了2.6倍, 证明了VO₂在激光防护中的适用性. 采用连续可调节系统研究得到VO₂在室温条件下的相变阈值功率密度为4.35 W/cm², 损伤阈值功率密度为404 W/cm²。 低相变阈值和高损伤阈值都进一步证明VO₂薄膜适用于激光防护系统。本实验制备的VO₂薄膜在光开关、光电存储器、智能窗等方面也具有广泛的应用价值.     

One-pot synthesis of VO x /Al 2 O 3 as efficient catalysts for propane dehydrogenation

Vanadium oxides, as highly efficiently catalysts, are widely applied in various catalytic reactions, such as the dehydrogenation of light alkanes and epoxidation of alkenes. In this paper, a series of VO _x /Al ₂ O ₃ catalysts were fabricated by the 1-pot method for catalytic propane dehydrogenation. The results indicated that the VO _x /Al ₂ O ₃ catalysts with loading of 10 wt.% vanadium exhibited optimized catalytic performance. The as-prepared catalysts were characterized by N ₂ adsorption-desorption, XRD, TEM, H ₂ -TPR, and XPS to explore the texture properties, morphology, and electronic environment of vanadium. In addition, several vanadium catalysts were also prepared by the incipient wetness impregnation (IWI) method to compare their catalytic performance with the 1-pot synthesized catalysts. The catalysts synthesized by the 1-pot method exhibited higher selectivity of propylene and longer catalyst lifetime at high propane conversion when compared to the counterpart synthesized by the IWI method.     

锌磷酸盐玻璃掺杂VO~(2+)吸收光谱和EPR谱研究

3d1离子(如VO2+,V4+)是一类非常重要的离子,其掺杂电子顺磁共振谱已有大量的研究,积累了丰富的实验数据。利用3d1离子在四角压缩八面体对称中EPR参量的高阶微扰公式,计算了锌磷酸盐玻璃晶体中掺杂VO2+的EPR参量(g因子g‖,g⊥和超精细结构常数A‖,A⊥)和光吸收谱。由于锌磷酸盐玻璃晶体中掺杂VO2+中配体O2-的自旋-轨道耦合参量ζ0p(≈150cm-1)与中心过渡金属3d1离子V4+的ζ0d(≈248cm-1)相差不太大,故来自配体的自旋-轨道耦合参量ζ0p对EPR参量和光吸收谱的贡献必须予以考虑。采用重叠模型建立了杂质中心结构参数与电子顺磁共振(EPR)参量以及光吸收谱之间的定量关系;通过拟合锌磷酸盐玻璃中V4+中心的EPR参量和光吸收谱理论与试验符合,获得了杂质中心[VO6]8-基团的局域结构;研究发现,[VO6]8-基团的平行和垂直于C4轴的键长分别为:R‖≈0.175nm,R⊥≈0.197nm,即[VO6]8-基团的局域结构为沿C4轴方向呈压缩的八面体结构;所得EPR参量和光吸收谱的理论值与实验符合很好,并对上述结果的合理性进行了讨论。这说明微扰法可以用来研究材料中掺杂3d1过渡金属离子的EPR参量和光吸收谱。此外,对超精细结构常数(A‖和A⊥)的研究发现,较大的芯区极化常数κ值说明VO2+中未配对的s电子对超精细结构常数有较大的贡献。     

磁控溅射制备W掺杂VO2/FTO复合薄膜及其性能分析

为了获得相变温度低且热致变色性能优越的光学材料, 室温下在F:SnO₂ (FTO)导电玻璃基板表面沉积钨钒金属膜, 再经空气气氛下的热氧化处理, 制备了W掺杂VO₂/FTO复合薄膜, 利用X射线光电子能谱、X射线衍射和扫描电镜对薄膜的结构和表面形貌进行了分析. 结果表明: 高温热氧化处理过程中没有生成W, F, V混合氧化物, W以替换V原子的方式掺杂. 与采用相同工艺和条件制备的纯VO₂/FTO复合薄膜相比, W掺杂VO₂薄膜没有改变晶面取向, 仍具有(110)晶面择优取向, 相变温度下降到35 ℃左右, 热滞回线收窄到4 ℃, 高低温下的近红外光透过率变化量提高到28%. 薄膜的结晶程度明显提高, 表面变得平滑致密, 具有很好的一致性, 对光电薄膜器件的设计开发和工业化生产具有重要意义. 关键词： W掺杂 2')" href="#">VO₂ FTO导电玻璃 磁控溅射