Pseudo-epitaxial C60 films prepared by a hot-wall method

We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C₆₀ evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C₆₀ planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C₆₀ is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.     

Dirac and Lagrangian reductions in the canonical approach to the first-order form of the Einstein-Hilbert action

It is shown that the Lagrangian reduction, in which solutions of equations of motion that do not involve time derivatives are used to eliminate variables, leads to results quite different from the standard Dirac treatment of the first-order form of the Einstein-Hilbert action when the equations of motion correspond to the first class constraints. A form of the first-order formulation of the Einstein-Hilbert action which is more suitable for the Dirac approach to constrained systems is presented. The Dirac and reduced approaches are compared and contrasted. This general discussion is illustrated by a simple model in which all constraints and the gauge transformations which correspond to first class constraints are completely worked out using both methods to demonstrate explicitly their differences. These results show an inconsistency in the previous treatment of the first-order Einstein-Hilbert action which is likely responsible for problems with its canonical quantization.     

General coordinate invariance and conformal invariance in nonrelativistic physics: Unitary Fermi gas

We show that the Lagrangian for interacting nonrelativistic particles can be coupled to an external gauge field and metric tensor in a way that exhibits a nonrelativistic version of general coordinate invariance. We explore the consequences of this invariance on the example of the degenerate Fermi gas at infinite scattering length, where conformal invariance also plays an important role. We find the most general effective Lagrangian consistent with both general coordinate and conformal invariance to leading and next-to-leading orders in the momentum expansion. At the leading order the Lagrangian contains one phenomenological constant and reproduces the results of the Thomas-Fermi theory and superfluid hydrodynamics. At the next-to-leading order there are two additional constants. We express various physical quantities through these constants.     

Morphological and electronic properties of the thin film phase of pentacene investigated by AFM and STM/STS

We investigated the morphological, structural and electronic properties of Pentacene thin films grown by vacuum thermal evaporation on different inert substrates at room temperature. The results of our AFM and STM analysis give an interplanar spacing of 1.54 nm corresponding to the (0 0 1) distance of the so-called “thin film phase”. The STS measurements show an HOMO-LUMO gap of 2.2 eV.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.     

Time-scale and excitation energy partition in sequential binary decays induced by heavy-ion collisions at ≃6 MeV·A

We studied the sequential binary decay of the systems ³²S+⁴⁵Sc, ⁷⁶Ge, ⁸⁹Y, ⁵⁹Co, ⁶³Cu and ¹⁹F+⁶³Cu induced by collisions at ≃6 MeV·A. The two stages of the process have reaction-times compatible with the dynamics of different mechanisms. The study of the excitation energy partition shows that the reaction mechanism of the first step has influence on the de-excitation of the primary fragments producing two decay components which have different time scale. Received: 25 March 1997 / Revised version: 2 December 1997     

Excimer-laser-assisted RF glow-discharge deposition of amorphous and microcrystalline silicon thin films

We combine the deposition of Hydrogenated amorphous Silicon (a-Si:H) by rf glow discharge with XeCl-excimer laser irradiation of the growing surface in order to obtain different kinds of silicon films in the same deposition system. In-situ UV-visible ellipsometry allows us to measure the optical properties of the films as the laser fluence is increased from 0 up to 180 mJ/cm² in separate depositions. For fixed glow-discharge conditions and a substrate temperature of 250° C we observe dramatic changes in the film structure as the laser fluence is increased. With respect to a reference a-Si:H film (no laser irradiation) we observe at low laser fluences (15–60 mJ/cm²) that the film remains amorphous but demonstrates enchanced surface roughness and bulk porosity. At intermediate fluences (80–165 m/Jcm²), we obtain an amorphous film with an enhanced density with respect to the reference film. Finally, at high fluences (165–180 mJ/cm²), we obtain microcrystalline films. The in-situ ellipsometry measurements are complemented by ex-situ measurements of the dark conductivity, X-ray diffraction, and Elastic Recoil Detection Analysis (ERDA). Simulation of the temperature profiles for different film thicknesses and for three laser fluences indicates that crystallization occurs if the surface temperature reaches the melting point of a-Si:H ( 1420 K). The effects of laser treatment on the film properties are discussed by taking into account the photonic and thermal effects of laser irradiation.Presented at LASERION 93, Munich, June 21–23, 1993     

Surface ablation by excimer laser irradiation of Ti and Ti6Al4V alloy

This paper presents the surface microstructure of Ti and Ti6Al4V alloy irradiated with a high output energy XeCl ( = 308 nm) excimer laser. The treatments are carried out on both materials at two beam fluences and the effects of single- and multiple-pulse irradiation are compared. The results of the scanning electron microscopy and of the X-ray diffraction techniques suggest the possible influence of both time-behaviour and energy fluence of the laser pulse on the relative weight of the ablation rate and of the reaction product deposition rate at the sample surface.     

Investigations of correlated ρ+ e− emission in heavy-ion collisions near the Coulomb barrier

We present the results obtained from a series of ^+–-coincidence measurements in heavy-ion collisions using the double-Orange-spectrometer at GSI. The collision systems U+U, U+Pb, and U+Ta were investigated at bombarding energies close to and slightly above (U+Ta) the Coulomb barrier. For all systems studied, very narrow (FWHM–20 keV) ^+– lines were observed in the sum-energy spectra, with kinetic energies ranging from 555 keV to 810 keV, superimposed on a continuous distribution mainly due to uncorrelated ^+– emission. Particularly in the U+Ta system, a pronounced sum-energy line appears at 634 keV, predominantly in deep-inelastic collisions. In some cases (e.g. U+Pb) the line characteristics is consistent with a two-body decay mode of an emitter which moves with the c.m. velocity of the colliding ions. However, other lines, and in particular the 634 keV line (U+Ta), exhibit a rather isotropical opening-angle distribution whereas their energy is unequally shared between positrons and electrons, thus being in clear disagreement with this scenario. In general, the data preclude an emission from the separated (moving) nuclei, and, in the latter cases, provide evidence that the e⁺e^–-pair decay occurs in the vicinity of the Coulomb field of a third heavy (positively charged) partner having only a small transverse velocity (|v|<>Dedicated to Prof. B. Povh on the occasion of his 60th birthday