Catalytic synthesis of single-crystalline gallium nitride nanobelts

Single-crystalline gallium nitride nanobelts have been synthesized through the reaction of gallium vapor with flowing ammonia using nickel as a catalyst. The as-synthesized products were characterized using X-ray powder diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction (SAED). XRD and SAED results revealed that the products are pure, single-crystalline GaN with hexagonal structure. The widths and thickness of the nanobelts ranged from 80 to 200 nm, and 10 to 30 nm, respectively. The lengths were up to several tens of micrometers. The nanobelts had smooth surface with no amorphous sheath, and a sharp-tip end. The growth mechanism of nanobelts was discussed.     

Sputtering yield of chromium by argon and xenon ions with energies from 50 to 500 eV

A radioactive tracer technique is described for the quantitative measurement of the sputtering yield of a target material electroplated on a copper substrate. Sputtering yields of chromium by argon and xenon ions with energies from 50 to 500 eV are reported. The ion beams, having a current density ranging from 0.01 to 0.1 mA/cm² at an operating pressure of 2×10^–5 Torr, were produced by a low-energy ion gun. The sputtered atoms were collected on an aluminum foil surrounding the target. ⁵¹Cr was used as the tracer isotope. The results indicate that the radioactive tracer technique is sensitive enough in measuring the extremely small amount of sputtered material at low ion currents and low ion energies.     

Polar oscillation and dispersion properties of quasi-confined optical phonon modes in a wurtzite GaN/AlxGa1−xN nanowire

Under the dielectric continuum model and Loudon’s uniaxial crystal model, the properties of the quasi-confined (QC) optical phonon dispersions and the electron-QC phonons coupling functions in a cylindrical wurtzite nanowire are deduced via the method of electrostatic potential expanding. Numerical computations on a GaN/Al_0.15Ga_0.85N wurtzite nanowire are performed. Results reveal that, for a definite axial wave number k_z and a certain azimuthal quantum number m, there are infinite branches of QC modes. The frequencies of these QC modes fall into two regions, i.e. a high frequency region and a low frequency region. The dispersion of the QC modes are quite apparant only when k_z and m are small. The lower-order QC modes in the higher frequency region play more important role in the electron-QC phonon interactions. Moreover, for the higher-order QC modes in the high frequency region, the electrostatic potentials “escaping” out of the well-layer material nearly could be ignored.     

Fabrication of bamboo-shaped GaN nanorods

Bamboo-shaped GaN nanorods were formed through a simple sublimation method. They were characterized by means of X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The TEM image showed that the nanorods were bamboo-like. XRD, HRTEM and SAED patterns indicated that the nanorods were single-crystal wurtzite GaN. Received: 8 January 2001 / Accepted: 28 April 2001 / Published online: 20 December 2001     

HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam

We show that HfO₂/AlGaN/GaN structures with HfO₂ layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO₂ was found ε_HfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10^–4 A/cm² at the threshold voltage. The comparison of the losses in the samples with and without HfO₂ indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Tip-induced local anodic oxidation on p-GaAs surface with non-contact atomic force microscopy

Nano-sized oxide structures resulted from localized electrochemical oxidation induced by a negatively biased atomic force microscopy (AFM) tip operated with the non-contact mode were fabricated on p-GaAs(1 0 0) surface. The geometrical characteristics of the oxide patterns and their dependences on various fabrication parameters, e.g., the anodization time, the biased voltages, the tip scanning rates, as well as the formation mechanism and relevant growth kinetics are investigated. Results indicate that the height of the protruded oxide dots grow exponentially as a function of time in the initial stage of oxidation and soon reaches a maximum height depending linearly with the anodized voltages, in according with the behaviors predicted by space charge limited local oxidation mechanism. In addition, selective micro-Auger analysis of the anodized region reveals the formation of Ga(As)O_x, indicating the prominent role played by the field-induced nanometer-size water meniscus in producing the nanometer-scale oxide dots and bumps on p-GaAs(1 0 0) surface.     

Collisional line shifting and broadening in the fundamental P-branch of CO in Ar between 214 and 324 K

The collisional shifts and widths of several P-branch spectral lines in the fundamental band of CO-Ar have been measured at temperatures between 214 and 324 K and pressures between 0.025 and 1 atm. The widths have been determined using a line shape model based on the solution of the transport/relaxation equation for the appropriate off-diagonal element of the density matrix. The model uses a realistic molecular potential energy surface to calculate the speed dependence of the collisional broadening, and a rigid sphere potential to calculate the translational motion. It is found that both the shifting and broadening coefficients follow a power law dependence on the temperature. Additionally, it is demonstrated that studies have tended to overestimate the accuracy of collisional widths when the line shape model used to obtain the widths involves multiple fitted line shape parameters or fails to fit the measured spectra within the experimental noise.     

Application of mid-infrared cavity-ringdown spectroscopy to trace explosives vapor detection using a broadly tunable (6–8 μm) optical parametric oscillator

A novel instrument, based on cavity-ringdown spectroscopy (CRDS), has been developed for trace gas detection. The new instrument utilizes a widely tunable optical parametric oscillator (OPO), which incorporates a zinc–germanium–phosphide (ZGP) crystal that is pumped at 2.8 μm by a 25-Hz Er,Cr:YSGG laser. The resultant mid-IR beam profile is nearly Gaussian, with energies exceeding 200 μJ/pulse between 6 and 8 μm, corresponding to a quantum conversion efficiency of approximately 35%. Vapor-phase mid-infrared spectra of common explosives (TNT, TATP, RDX, PETN and Tetryl) were acquired using the CRDS technique. Parts-per-billion concentration levels were readily detected with no sample preconcentration. A collection/flash-heating sequence was implemented in order to enhance detection limits for ambient air sampling. Detection limits as low as 75 ppt for TNT are expected, with similar concentration levels for the other explosives. Received: 1 April 2002 / Revised version: 13 June 2002 / Published online: 12 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-408/524-0551, E-mail: mtodd@picarro.com     

Temperature‐dependent electroluminescence intensity in green and blue (In,Ga)N multiple‐quantum‐well diodes

The electroluminescence (EL) intensity has been investigated of green and blue (In,Ga)N multiple‐quantum‐well diodes grown on c ‐plane sapphire over a wide temperature range and as a function of current between 0.01 mA and 10 mA. The EL intensity of the green diode with p‐(Al,Ga)N electron blocking layer does not show low‐temperature quenching, especially at low injection levels, previously observed for the blue (In,Ga)N quantum‐well diodes. This finding rules out possi‐ bilities that the freeze‐out of holes at deep Mg acceptor levels and the failure of hole injections through the p‐(Al,Ga)N layer are directly responsible for the EL quenching at temperatures below 100 K. Variations of the EL efficiency with current level suggest that capture/escape efficiencies of injected carriers by the wells play an important role for the determination of EL external quantum efficiency. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

InAsSb/InAsSbP current-tunable laser with narrow spectral line width

The article describes the manufacture and testing of a new type of semiconductor laser working at low temperatures (12–100 K) in the wavelength range 3200–3300 cm^-1. This kind of laser can be tuned in the modal range up to 6 cm^-1 and is characterized by a narrow spectral line width (about 7 MHz). Received: 12 September 2002 / Final version: 29 January 2003 / Published online: 22 May 2003 RID="*" ID="*"Corresponding author. Fax: +420-286/591-766, E-mail: civis@jh-inst.cas.cz