The role of emitter quasi-bound state and scattering on intrinsic bistability in resonant tunneling diodes

Usually, numerical self-consistent calculations predict a much larger intrinsic bistability region than actually is measured in resonant tunneling diodes (RTDs). In addition, numerical calculations have shown that scattering in the well reduces bistability. We used a unified treatment of current flowing from continuum states and emitter quasi-bound states to show numerically and analytically that not only the scattering in the quantum well but also the scattering in the emitter reduces bistability. Moreover, within the Hartree approximation, bistability occurs by tunneling resonantly between emitter quasi-bound state and well quasi-bound state as a pitchfork bifurcation.     

单谐振腔外部Q值的计算方法

 通过对带有耦合器的单驻波腔进行等效电路分析，推导出可计算带有耦合波导的单谐振腔外部Q值的反射相位法，该方法通过计算不同频率的反射相位来确定谐振频率和外部Q值。详细叙述了在CST Microwave Studio中用谐振模式求解法、直接时域跟踪法和反射相位法进行计算的步骤；用这3种方法分别计算了二次发射微波电子枪的外部Q值并和实验测量结果做了比较。结果显示3种计算方法都有很高的精度,但反射相位法的速度最快，耗时1 071 s。计算发现外部Q值与耦合口长度的4.1次方成反比。     

InAs/GaSb/AlSb resonant tunneling spin device concepts

We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.     

Synthesis and characterization of hollandite-type material intended for the specific containment of radioactive cesium

The hollandite Ba₁Cs_0.28Fe_0.82Al_1.46Ti_5.72O₁₆, which has been proposed for the cesium-specific conditioning, can be synthesized either by an alcoxyde or a dry route. In both cases, a two-step protocol is applied, i.e., a calcination at 1000 °C followed by a sintering at 1200 °C. After sintering, both synthetic processes lead to a tetragonal form. According to the X-ray diffraction (XRD) patterns collected at the barium and the cesium K absorption edges, the different positions of these two elements have been evidenced with a more centered position in the oxygen cubic site of the tunnel for Ba than for Cs. On the contrary, after calcination, the two synthetic routes yield different products. The alcoxyde route gives rise to a mixture of the aforementioned Cs- and Ba-containing tetragonal I4/m hollandite, a Cs-only-containing monoclinic I2/m hollandite and an unidentified phase with a weak coherence length containing only Ba. The dry route yields a single tetragonal hollandite material containing Ba and Cs slightly different in composition from the targeted compound.     

邻二甲苯…Ar, N2, NH3(ND3)范德华复合物的共振双光子电离光谱

在超声分子束中，使用双光子共振电离光谱技术和飞行时间质谱技术研究了复合物邻二甲苯…Ar．N2，NH3(ND3)．通过理论计算及同位素光谱效应．合理地归属了这些复合物的光谱．并由此获得这些复合物分子问各种模式的振动频率．     

回旋速调管放大器输出腔的特性研究

 利用变截面波导的耦合模理论，根据输出腔中电场幅值分布函数所满足的微分方程组，编写了具有自动优化功能的计算程序，分析研究了不同渐变角度、考虑腔体损耗前后和输出腔与外电路失配时，谐振频率、腔体品质因数和高频场幅值沿轴分布的变化情况，为进一步研究高频场与电子注的互作用和输出腔奠定了基础。     

Quantum dot resonant tunneling FET on graphene

At this paper a field effect transistor based on graphene nanoribbon (GNR) is modeled. Like in most GNR-FETs the GNR is chosen to be semiconductor with a gap, through which the current passes at on state of the device. The regions at the two ends of GNR are highly n-type doped and play the role of metallic reservoirs so called source and drain contacts. Two dielectric layers are placed on top and bottom of the GNR and a metallic gate is located on its top above the channel region. At this paper it is assumed that the gate length is less than the channel length so that the two ends of the channel region are un-gated. As a result of this geometry, the two un-gated regions of channel act as quantum barriers between channel and the contacts. By applying gate voltage, discrete energy levels are generated in channel and resonant tunneling transport occurs via these levels. By solving the NEGF and 3D Poisson equations self consistently, we have obtained electron density, potential profile and current. The current variations with the gate voltage give rise to negative transconductance.     

H2S gas sensor based on integrated resonant dual-microcantilevers with high sensitivity and identification capability

Detection of trace-level hydrogen sulfide (H₂S) gas is of great importance whether in industrial production or disease diagnosis. This research presents a novel H₂S gas sensor based on integrated resonant dual-microcantilevers which can identify and detect trace-level H₂S in real-time. The sensor consists of two integrated resonant microcantilever sensors with different functions. One cantilever sensor can identify H₂S by outputting positive frequency shift signals, while the other cantilever sensor will detect H₂S as a normally used cantilever sensor with negative frequency shifts. Combined the two cantilever sensors, the proposed gas sensor can distinguish H₂S from a variety of common gases, and the detection limit to H₂S of the sensor is as sensitive as below 1 ppb.     

980nm半导体激光器输出光谱特性的改善

为了改善980nm半导体激光器的输出光谱特性,采用传输矩阵分析法推导了双布喇格光纤光栅谐振腔的传输表达式,对布喇格光纤光栅长度和谐振腔腔长对输出光谱的影响进行模拟仿真,结果表明布喇格光纤光栅长度对输出光谱的影响大于谐振腔腔长对输出光谱的影响,加长布喇格光纤光栅长度能压缩输出光谱线宽.在980nm半导体激光器尾纤上写入不同布喇格光纤光栅长度的双布喇格光纤光栅谐振腔,验证了引入双布喇格光纤光栅谐振腔在压缩980nm半导体激光器输出光谱线宽的同时改善了其输出光谱的稳定性.当环境温度在0~75℃范围内变化时,980nm半导体激光器输出中心波长仅变化0.06nm.