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InAs/GaSb/AlSb resonant tunneling spin device concepts
Authors:David Z -Y Ting  Xavier Cartoix
Institution:a Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA;b Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA
Abstract:We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 Å semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.
Keywords:Spin filter  Spin pump  Resonant tunneling  Bulk inversion asymmetry  Structural inversion asymmetry  Rashba effect
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