Image Formation in Low Vacuum SEM

The role of positive gaseous ions in the formation of secondary electron images in low vacuum scanning electron microscopes is discussed. This paper describes the charging processes and related effects that occur during high vacuum imaging of insulators and then discusses the influence of ions on those processes. The ions are responsible for a number of phenomena, including distortion of the electric field above and below the specimen surface due to space charge, removal of excess negative charge from the specimen, alteration of the specimen surface barrier, and scavenging/filtering of the secondary electron emission. The resulting electron-specimen-ion interactions can give rise to interesting contrast effects that are unique to this class of instruments.     

聚合物纳米复合电介质

聚合物纳米复合材料能够发挥纳米材料在电、磁、光等方面的优越性,也具有聚合物的易成型等方面的优点,正成为电介质领域研究的热点.本文综述了聚合物纳米复合材料在介电性能方面的研究概况,主要涉及了电导、介电强度与空间电荷、介电常数、介电损耗以及局部放电等方面的研究.最后展望了今后的研究方向.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

Dielectric and13C NMR studies of the carbon monoxide clathrate hydrate

The structure I clathrate hydrate of carbon monoxide has been studied using dielectric measurements and¹³C NMR spectroscopy. Broad, weak dielectric absorption curves with maxima at 2.2–3.8 K yieldE _a = 0.14 kJ mol^–1 for the average Arrhenius activation energy associated with the reorientation of the low polarity guest. Except for H₂S this represents the fastest reorienting polar guest known among the clathrate hydrates. The low temperature dielectric absorption curves can best be fitted with a Cole-Davidson asymmetric distribution of relaxation times and activation energies (with = 0.06 at 4 × 10⁶ Hz), which at 10⁷ Hz has been resolved into a double symmetric distribution of discrete relaxation times for CO in the small and large cages. The cross-polarization magic angle spinning¹³C NMR spectra indicate identical chemical shifts for CO in the small and large cages, in contrast to other hydrates. The static spectra show that the CO molecules undergo anisotropic reorientation in the large cages and that there is still considerable mobility at 77 K. One possible model for the anisotropic motion has the CO rapidly moving among sites over each of the 14 faces of the cage with the CO axis orientated towards the cage centre. The cage occupancy ratio at 220 K, _s/ _L = 1.11, indicates slightly greater preference of CO for the small cage.Dedicated to Dr D. W. Davidson in honor of his great contributions to the sciences of inclusion phenomena.     

层叠Blumlein线多开关导通时间分散性

高介电常数陶瓷储能脉冲形成线需要用到多开关触发的层叠Blumlein线结构。从形成线波过程理论出发，分析了多开关导通时间分散性对层叠Blumlein线及其输出波形的影响。主要包括两方面影响:其一是造成输出方波脉冲的前沿和后沿均出现阶梯形畸变；其二是使得各延迟导通的平行平板Blumlein线承受过电压，容易引起陶瓷储能介质的电击穿。在不单独考虑开关电感的理想情况下，利用PSpice电路程序模拟了开关导通时间分散性对四级层叠Blumlein线的影响，模拟结果与波过程理论分析一致。为减弱这些影响，提出了可行的解决方案。     

Solution-Processable Low Voltage Organic Transistors of Thieno[3,2-b]thiophene-Based Conducting Polymer

A low-operating voltage and high performance polymeric field effect transistors using octadecylphosphonic acid-treated high-k AlOx and HfO₂ hybrid dielectrics were demonstrated. High-k metal oxide hybrid dielectrics were prepared by oxygen plasma treatment of deposited Al film for AlOx and by spin coating of solution-processable HfO₂ sol-gel solution for HfO₂ in combination with phosphoric acid-based self-assembled monolayer (SAM), resulting in high capacitance (10 nF/cm² for SiO₂, 600 nF/cm² for AlOx and 580 nF/cm² for HfO₂). With phosphoric acid-based SAM on high-k metal oxide and thermal annealing of thieno[3,2-b]thiophene-based conducting polymer, the device performance was significantly enhanced. The highest mobility of the transistors using ODPA-treated AlOx as a gate dielectric is 2.3 × 10^?2 cm² V^?1 s^?1 in the saturation region with the source-drain of ?2 V. In ODPA-treated HfO₂ hybrid dielectric, the saturated mobility is 1.1 × 10^?2 cm² V^?1 s^?1 and the threshold voltage was measured to be ?0.31 V, which is at least one order lower than SiO₂ hybrid dielectric (?3 V).     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

Atomic and Electronic Structures of Traps in Silicon Oxide and Silicon Oxynitride

Silicon oxide (SiO₂) and silicon oxynitride (SiO_xN_y) are two key dielectrics used in silicon devices. The excellent interface properties of these dielectrics with silicon have enabled the tremendous advancement of metal-oxide-semiconductor (MOS) technology. However, these dielectrics are still found to have pronounced amount of localized states which act as electron or hole traps and lead to the performance and reliability degradations of the MOS integrated circuits. A better understanding of the nature of these states will help to understand the constraints and lifetime performance of the MOS devices. Recently, due to the available of ab initio quantum-mechanical calculations and some synchrotron radiation experiments, substantial progress has been achieved in understanding the atomic and electronic nature of the defects in these dielectrics. In this review, the properties, formation and removal mechanisms of various defects in silicon oxide and silicon oxynitride films will be critically discussed. Some remarks on the thermal ionization energies in connection with the optical ionization energies of electron and hole traps, as well as some of the unsolved issues in these materials will be highlighted.     

Physalis method for heterogeneous mixtures of dielectrics and conductors: Accurately simulating one million particles using a PC

Prosperetti’s seminal Physalis method, an Immersed Boundary/spectral method, had been used extensively to investigate fluid flows with suspended solid particles. Its underlying idea of creating a cage and using a spectral general analytical solution around a discontinuity in a surrounding field as a computational mechanism to enable the accommodation of physical and geometric discontinuities is a general concept, and can be applied to other problems of importance to physics, mechanics, and chemistry. In this paper we provide a foundation for the application of this approach to the determination of the distribution of electric charge in heterogeneous mixtures of dielectrics and conductors. The proposed Physalis method is remarkably accurate and efficient. In the method, a spectral analytical solution is used to tackle the discontinuity and thus the discontinuous boundary conditions at the interface of two media are satisfied exactly. Owing to the hybrid finite difference and spectral schemes, the method is spectrally accurate if the modes are not sufficiently resolved, while higher than second-order accurate if the modes are sufficiently resolved, for the solved potential field. Because of the features of the analytical solutions, the derivative quantities of importance, such as electric field, charge distribution, and force, have the same order of accuracy as the solved potential field during postprocessing. This is an important advantage of the Physalis method over other numerical methods involving interpolation, differentiation, and integration during postprocessing, which may significantly degrade the accuracy of the derivative quantities of importance. The analytical solutions enable the user to use relatively few mesh points to accurately represent the regions of discontinuity. In addition, the spectral convergence and a linear relationship between the cost of computer memory/computation and particle numbers results in a very efficient method. In the present paper, the accuracy of the method is numerically investigated by example computations using one dielectric particle, one isolated conductor particle, one conductor particle connected to an external source with imposed voltage, and two conductor/dielectric particles with strong interactions. The efficiency of the method is demonstrated with one million particles, which suggests that the method can be used for many important engineering applications of broad interest.