限域量子态调控研究

电子、激子和声子等量子态在固体中的行为早已被人们所熟知. 然而，当体系的尺寸只有纳米量级的时候，已有的固体理论常常不能适用，需要新的低维物理理论的建立. 我们系统研究了低维体系限域量子态（包括电子、激子和声子）的行为对环境、应力、压力及光的响应和性质的调控. 较早认识到低维体系之显著的表面-体积比对量子态性质调控之有效性，系统地揭示了低维体系的一系列由表面和应力决定的新颖性质，证明了低维体系的表面和应力效应同量子限域效应同等重要. 本文概况了如下五个方面的结果：（1）一种使用应力效应调控电子能带结构的方法和（2）一种使用表面效应调控电子能带结构的方法（这两个方法都可将低维体系能带从间接能隙调控至直接能隙能带结构）；（3）一种低维体系表面掺杂方法，该方法将在低维体系掺杂中取代传统方法；（4）量子点表面诱导的光致异构现象；（5）基于表面自催化半导体低维结构的形成机理. 希望我们的研究工作有助于促进低维体系在光电子、纳电子、环境、能源、生物和医学等领域的应用.     

应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

The influence of pulse duration on the stress levels in ablation of ceramics: A finite element study

We present a finite element model to investigate the dynamic thermal and mechanical response of ceramic materials to pulsed infrared radiation. The model was applied to the specific problem of determining the influence of the pulse duration on the stress levels reached in human dental enamel irradiated by a CO₂ laser at 10.6 μm with pulse durations between 0.1 and 100 μs and sub-ablative fluence. Our results indicate that short pulses with durations much larger than the characteristic acoustic relaxation time of the material can still cause high stress transients at the irradiated site, and indicate that pulse durations of the order of 10 μs may be more adequate both for enamel surface modification and for ablation than pulse durations up to 1 μs. The model presented here can easily be modified to investigate the dynamic response of ceramic materials to mid-infrared radiation and help determine optimal pulse durations for specific procedures.     

Stress concentration and effective stiffness of aligned fiber reinforced composite with anisotropic constituents

The paper addresses the problem of calculation of the local stress field and effective elastic properties of a unidirectional fiber reinforced composite with anisotropic constituents. For this aim, the representative unit cell approach has been utilized. The micro geometry of the composite is modeled by a periodic structure with a unit cell containing multiple circular fibers. The number of fibers is sufficient to account for the micro structure statistics of composite. A new method based on the multipole expansion technique is developed to obtain the exact series solution for the micro stress field. The method combines the principle of superposition, technique of complex potentials and some new results in the theory of special functions. A proper choice of potentials and new results for their series expansions allow one to reduce the boundary-value problem for the multiple-connected domain to an ordinary, well-posed set of linear algebraic equations. This reduction provides high numerical efficiency of the developed method. Exact expressions for the components of the effective stiffness tensor have been obtained by analytical averaging of the strain and stress fields.     

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

激光与材料参数对瞬态SBS 诱导的激光超声破坏效果的影响

 通过数值求解一维瞬态受激布里渊散射（SBS）声光耦合波方程，从理论上分析了泵浦激光参数及光学材料参数对SBS过程发生阈值的影响。以SBS过程中建立起来的应力场抗拉（压）强度和散射场的反射率为判据，分析了激光脉宽及作用区域长度对激光超声破坏材料效果的影响，探讨了短脉冲激光（约ns）引起的激光超声对材料的破坏机理；讨论了通过参数配置有效遏制SBS过程激光超声对光学材料的破坏问题。     

Evaluation of the Lazarus-Leblond constants in the asymptotic model of the interfacial wavy crack

The paper addresses the problem of a semi-infinite plane crack along the interface between two isotropic half-spaces. Two methods of solution have been considered in the past: Lazarus and Leblond [1998a. Three-dimensional crack-face weight functions for the semi-infinite interface crack-I: variation of the stress intensity factors due to some small perturbation of the crack front. J. Mech. Phys. Solids 46, 489-511, 1998b. Three-dimensional crack-face weight functions for the semi-infinite interface crack-II: integrodifferential equations on the weight functions and resolution J. Mech. Phys. Solids 46, 513-536] applied the “special” method by Bueckner [1987. Weight functions and fundamental fields for the penny-shaped and the half-plane crack in three space. Int. J. Solids Struct. 23, 57-93] and found the expression of the variation of the stress intensity factors for a wavy crack without solving the complete elasticity problem; their solution is expressed in terms of the physical variables, and it involves five constants whose analytical representation was unknown; on the other hand, the “general” solution to the problem has been recently addressed by Bercial-Velez et al. [2005. High-order asymptotics and perturbation problems for 3D interfacial cracks. J. Mech. Phys. Solids 53, 1128-1162], using a Wiener-Hopf analysis and singular asymptotics near the crack front.The main goal of the present paper is to complete the solution to the problem by providing the connection between the two methods. This is done by constructing an integral representation for Lazarus-Leblond's weight functions and by deriving the closed form representations of Lazarus-Leblond's constants.     

热容模式下激光介质的动态光学畸变

 开展了热容模式下激光介质动态光学畸变研究，初步分析了温度梯度、光弹效应及介质端面变形对整个波前畸变带来的影响，并将光学畸变转化为谐振腔损耗，数值模拟了热容激光器输出功率随时间的变化规律，模拟结果表明：当激光器工作温度低于400 K时，由粒子数玻耳兹曼分布引起的功率下降可以忽略，动态热效应是实验中热容激光器输出功率随时间快速下降的原因。     

The analysis of thermal stresses in thermopiezoelastic semi-infinite body with an edge crack

Summary  Thermopiezoelastic materials have recently attracted considerable attention because of their potential use in intelligent or smart structural systems. The governing equations of a thermopiezoelastic medium are more complex due to the intrinsic coupling effects that take place among mechanical, electrical and thermal fields. In this analysis, we deal with the problem of a crack in a semi-infinite, transversely isotropic, thermopiezoelastic material by means of potential functions and Fourier transforms under steady heat-flux loading conditions. The problem is reduced to a singular integral equation that is solved. The thermal stress intensity factor for a crack situated in a cadmium selenide material is calculated. Received 20 March 2001; accepted for publication 18 October 2001