Effects of B′-site transition metal on the properties of double perovskites Sr2FeMO6 (M=Mo, W): B′ 4d-5d system

The crystal structure, magnetic and magnetotransport properties of the variation of B′-site transition metal in Sr₂FeMO₆ (M=Mo, W) with double perovskites structure have been investigated systematically. Measurements of magnetization vs. temperature at H=5 T show that Sr₂FeMoO₆ is a ferromagnet and Sr₂FeWO₆ is an antiferromagnet with T_N∼35 K. Additionally, the large magnetoresistance ratio (MR) of ∼22% (H=3 T) at room temperature (RT) was observed in the Sr₂FeWO₆ compound. However, the Sr₂FeMoO₆ compound did not show any significant MR even at high fields and RT (MR∼1%; H=3 T and 300 K). The implications of these findings are supported by band structure calculations to explain the interaction between the 4d(Mo) and 5d(W) orbitals of transition metal ions and oxygen ions.     

Dynamic scanning force microscopy study of self-assembled DNA-protein nanostructures

Self-assembled oligomeric nanostructures consisting of bisbiotinylated DNA fragments connected by the protein streptavidin (STV) are studied by dynamic scanning force microscopy (SFM) operating in air. A comparison of the images taken in repulsive and attractive regimes is systematically made on DNA and STV structures. Stable and reproducible SFM images are obtained in the attractive regime by using a special feedback circuit, called Q-control. On the other hand, when SFM is operating in the repulsive regime, deformation of the structures that reduce the resolution and the image quality are clearly observable. The heights of both DNA and STV have been measured as a function of the tip/molecule interaction forces. This study offers the possibility to suggest a different mechanical behavior of DNA with respect to STV. Received: 24 July 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

Optical properties of Fe-doped silica films on Si

Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO₂:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl₃-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.     

Creating, detecting and locating ultracold molecules in a surface trap

Ultracold molecules have been produced by photoassociation of Cs atoms trapped in a mirror magneto-optical trap. The molecules were detected by resonantly enhanced multi-photon ionization followed by time-of-flight mass spectroscopy. The time-of-flight ofatomic and molecular ions was investigated in the presence of a dc bias voltageapplied to the conducting mirror. This technique provides a new tool for determining the distance between the cold molecules and the mirror surface. This revised version was published online in August 2005 with a corrected cover date.     

Morphological and electronic properties of the thin film phase of pentacene investigated by AFM and STM/STS

We investigated the morphological, structural and electronic properties of Pentacene thin films grown by vacuum thermal evaporation on different inert substrates at room temperature. The results of our AFM and STM analysis give an interplanar spacing of 1.54 nm corresponding to the (0 0 1) distance of the so-called “thin film phase”. The STS measurements show an HOMO-LUMO gap of 2.2 eV.     

Sympathetic cooling rate of gas-phase ions in a radio-frequency-quadrupole ion trap

We theoretically investigated the mass dependence of the sympathetic cooling rate of gas-phase ions trapped in a linear radio-frequency-quadrupole ion trap. Using an a priori molecular dynamical calculation, tracing numerically with Newtonian equations of motion, we found that ions with a mass greater than 0.54±0.04 times that of the laser-cooled ions are sympathetically cooled; otherwise, they are heated. To understand the mass dependence obtained using the molecular-dynamical calculation, we made a heat-exchange model of sympathetic cooling, which shows that the factor of 0.54±0.04 is a consequence of absence of micro-motion along the axis of the linear ion trap. Received: 10 December 2001 / Revised version: 28 January 2002 / Published online: 14 March 2002     

Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate

The deformation surrounding Vickers indentations on InGaAsP/InP epilayers have been studied in detail. The surface topography was characterized by using atomic force microscopy (AFM). The material pile-up and sink-in regions around the indentation impression was observed for the quaternary InGaAsP/InP epilayers. The sectional analysis mode of the AFM shows the depth profile at the indented region. Microindentation studies were carried out for different atomic fraction of the quaternary InGaAsP/InP compound semiconductor alloys. The microhardness values of InGaAsP/InP epilayers were found to be in the range of 5.08 and 5.73 GPa. These results show that the hardness value of the quaternary alloy drastically increases as the composition of As was increased by 0.01 atomic fraction and when the phosphorous concentration decreases from 0.4 to 0.38. The reason may be that the increase in As concentration hardens the lattice when phosphorous concentration was less and hardness decreases when phosphorous was increased.     

Surface structure investigations using noncontact atomic force microscopy

Surfaces of several A_IIIB_V compound semiconductors (InSb, GaAs, InP, InAs) of the (0 0 1) orientation have been studied with noncontact atomic force microscopy (NC-AFM). Obtained atomically resolved patterns have been compared with structural models available in the literature. It is shown that NC-AFM is an efficient tool for imaging complex surface structures in real space. It is also demonstrated that the recent structural models of III-V compound surfaces provide a sound base for interpretation of majority of features present in recorded patterns. However, there are also many new findings revealed by the NC-AFM method that is still new experimental technique in the context of surface structure determination.     

Thickness influence on surface morphology and ozone sensing properties of nanostructured ZnO transparent thin films grown by PLD

Transparent zinc oxide (ZnO) thin films with a thickness from 10 to 200 nm were prepared by the PLD technique onto silicon and Corning glass substrates at 350 °C, using an Excimer Laser XeCl (308 nm). Surface investigations carried out by atomic force microscopy (AFM) and X-ray diffraction (XRD) revealed a strong influence of thickness on film surface topography. Film roughness (RMS), grain shape and dimensions correlate with film thickness. For the 200 nm thick film, the RMS shows a maximum (13.9 nm) due to the presence of hexagonal shaped nanorods on the surface. XRD measurements proved that the films grown by PLD are c-axis textured. It was demonstrated that the gas sensing characteristics of ZnO films are strongly influenced and may be enhanced significantly by the control of film deposition parameters and surface characteristics, i.e. thickness and RMS, grain shape and dimension.     

Thermal stability of nanoscale silver metallization in Ag/W/Co/Si(1 0 0) multilayer

In this work, we have studied thermal stability of nanoscale Ag metallization and its contact with CoSi₂ in heat-treated Ag(50 nm)/W(10 nm)/Co(10 nm)/Si(1 0 0) multilayer fabricated by sputtering method. To evaluate thermal stability of the systems, heat-treatment was performed from 300 to 900 °C in an N₂ ambient for 30 min. All the samples were analyzed by four-point-probe sheet resistance measurement (R_s), Rutherford backscattering spectrometry (RBS), X-ray diffractometry (XRD), and atomic force microscopy (AFM). Based on our data analysis, no interdiffiusion, phase formation, and R_s variation was observed up to 500 °C in which the Ag layer showed a (1 1 1) preferred crystallographic orientation with a smooth surface and R_s of about 1 Ω/□. At 600 °C, a sharp increase of R_s value was occurred due to initiation of surface agglomeration, WSi₂ formation, and interdiffusion between the layers. Using XRD spectra, CoSi₂ formed at the Co/Si interface preventing W silicide formation at 750 and 800 °C. Meantime, RBS analysis showed that in this temperature range, the W acts as a cap layer, so that we have obtained a W encapsulated Ag/CoSi₂ contact with a smooth surface. At 900 °C, the CoSi₂ layer decomposed and the layers totally mixed. Therefore, we have shown that in Ag/W/Co/Si(1 0 0) multilayer, the Ag nano-layer is thermally stable up to 500 °C, and formation of W-capped Ag/CoSi₂ contact with R_s of 2 Ω/□ has been occurred at 750-800 °C.