Estimation of growth rate in unidirectionally solidified multicrystalline silicon by the growth-induced striation method

Multicrystalline silicon was grown by unidirectional solidification method using the accelerated crucible rotation technique. The application of the accelerated crucible rotation technique in unidirectional solidification method induced growth striations across the axial direction of the grown crystal. This striation pattern was observed from carbon concentration distribution, obtained by using Fourier transform infrared spectroscopy. The generated striation pattern was found to be weak and discontinuous. Some striations were absent, probably due to back melting, caused during each crucible rotation. From the growth striations and applied time period in crucible rotation, the growth rate was estimated by using Fourier transformation analysis.     

高纯金属镨中痕量稀土杂质的电感耦合等离子体原子发射光谱分析及光谱干扰的校正

本文提出了PGS-2型平面光栅光谱仪(色散率0.18纳米,二级光谱)与PlasmaTherm ICP-5000D射频发生器联用,乙醇预去溶方式进样,同时直接测定高纯金属镨中5个痕量稀土杂质元素的方法。并讨论了基体浓度对检出限的影响以及光谱干扰及其校正方法。当样品溶液中镨的浓度为5毫克/毫升时,测定下限分别为镧、钕和钐0.002%,铈0.003%和钇0.0005%。获得了良好的实验结果,其相对标准偏差为1.2-6.2%。     

高纯氧化钆中14种稀土杂质元素的柱色谱分离ICP-AES法测定

用Ｐ５０７萃淋树脂柱色谱法分离高纯氧化钆基体与稀土杂质。用ＩＣＰ－ＡＥＳ法测定高纯氧化钆中微量稀土杂质。选择了柱色谱分离的合适条件。优化了仪器测定参数。使本方法测定稀土总量下限小于１×１０－５％。可以满足９９．９９９９％高纯氧化钆的测定。此方法回收率在８５％－１１０％之间。相对标准偏差小于１８％。     

一种面向PX装置成品杂质含量检测的拉曼光谱分析法

面向对二甲苯(PX)成品的在线分析问题,为克服色谱分析法的不足,本文提出了一种基于拉曼光谱的PX成品杂质含量分析方法。为了克服激光中心波长与功率波动带来的不良影响,提出了激光中心波长自动校正与PX特征峰归一化方法;同时,结合相关分析获取了主要杂质的特征波段,并采用偏最小二乘算法进行定量分析。针对11个未知样本,PLS模型对甲苯(MB)、乙苯(EB)、间二甲苯(MX)、邻二甲苯(OX)的标准预测误差分别为0.03%、0.11%、0.02%、0.03%。实验结果表明,拉曼光谱法能够快速、准确且无损地测定PX成品中主要杂质的含量,为在线拉曼分析系统的开发奠定了方法基础。     

Trace Impurities in Phosphor Grade CaWO4 - A D.C. Arc Spectrographic Method

Abstract

A simple d.c. are emission spectrographic method is described for the determination of 12 trace impurities in phosphor grade CaWO₄ in the range 5 to 250 ppm. A charge of 25 mgs containing sample mixed with graphite in the ratio 1:3 is excited in a 10 amp d.c. arc. Scandium is used as the internal standard. The precision of the method is ± 15%. Detailed discussion on the selection of the final parameters has been given with supporting data.     

Synthesis and Characterization of Metabolites and Potential Impurities of the Antiulcerative Drug Tenatoprazole

Tenatoprazole (Ulsacare^®) is a recently developed antiulcerative drug used for the treatment of both erosive and nonerosive gastroesophageal reflux disease. During the bulk synthesis of tenatoprazole, we have observed four impurities (tenatoprazole N‐oxide, tenatoprazole sulfone N‐oxide, N‐methyl tenatoprazole, and desmethoxy tenatoprazole) and two metabolites (tenatoprazole sulfide and tenatoprazole sulfone). The present work describes the synthesis and characterization of these impurities.     

Quality by design: A systematic and rapid liquid chromatography and mass spectrometry method for eprosartan mesylate and its related impurities using a superficially porous particle column

The present work describes the systematic development of a robust, precise, and rapid reversed‐phase liquid chromatography method for the simultaneous determination of eprosartan mesylate and its six impurities using quality‐by‐design principles. The method was developed in two phases, screening and optimization. During the screening phase, the most suitable stationary phase, organic modifier, and pH were identified. The optimization was performed for secondary influential parameters—column temperature, gradient time, and flow rate using eight experiments—to examine multifactorial effects of parameters on the critical resolution and generated design space representing the robust region. A verification experiment was performed within the working design space and the model was found to be accurate. This study also describes other operating features of the column packed with superficially porous particles that allow very fast separations at pressures available in most liquid chromatography instruments. Successful chromatographic separation was achieved in less than 7 min using a fused‐core C₁₈ (100 mm × 2.1 mm, 2.6 μm) column with linear gradient elution of 10 mM ammonium formate (pH 3.0) and acetonitrile as the mobile phase. The method was validated for specificity, linearity, accuracy, precision, and robustness in compliance with the International Conference on Harmonization Q2 (R1) guidelines. The impurities were identified by liquid chromatography with mass spectrometry.     

Recovery of low temperature electron irradiation-induced damage in n-type gaas

Undoped n-type GaAa was irradiated near 5 and 77 °K with electrons having incident energies between 0.46 and 1.30 MeV. The recovery of the electrical resistivity and the Hall coefficient upon annealing from 4 to 520 °K was monitored. Changes which occurred upon annealing below 200 °K could be reversed by ionizing radiation. A small amount of irreversible ionization-induced recovery was observed after irradiation near 5 °K. Major irreversible recovery stages were centered near 235 (stage I), 280 (stage II) and 520 °K (stage III). Recovery in stage I and II obeyed first order kinetics. The activation energies of stages I and II were determined as 0.72 and 0.83 eV, respectively. The carrier concentration changes per unit irradiation dose corresponding to the three recovery stages differed in their energy dependence indicating that the defects which are removed in stage III have the lowest threshold energy. The carrier concentration changes per unit irradiation dose corresponding to stages I and III were higher for irradiation near 5 °K than for irradiation near 77 °K.     

Multi-carrier transport properties in p-type ZnO thin films

By the aid of temperature- and magnetic-field-dependent Hall effect measurements, we have extracted the multi-carrier transport information in N-doped and N–In codoped p- ZnO thin films grown on Si substrates through mobility spectrum analysis. It is found that owing to the compensation between free electrons and holes, the two-dimensional hole gas from ZnO/Si interface layers becomes determinant and results in the high p-type conductivity and high hole mobility in the ZnO samples. Compared with N-doping, the N–In codoping introduces many In donors and increases acceptor incorporation, as well as enhancing the free hole mobility due to the short-range dipole-like scattering.     

SiC polytypes process affected by Ge predeposition on Si(111) substrates

Structural and optical measurements were performed on silicon carbide (SiC) samples containing several polytypes. The SiC samples investigated were grown on (111) Si substrates by solid source molecular beam epitaxy (SSMBE). Several quantities of Ge were predeposited before the growth procedure. The influence of Ge on the SiC polytypes formation was studied by X-Ray, FTIR and μ-Raman characterizations methods. The spectra of the samples with less than one Ge monolayer exhibit a mixture of 2H, 15R and 3C–SiC polytypes. This mixture is due to the mismatch between the heterostructure layers. We propose that the Ge predeposition in the heterostructure can be used to stabilize and unify the polytypes formation.