CsGeI3空穴传输层平面异质结钙钛矿太阳电池的模拟优化

采用AFORS-HET软件对CsGeI3空穴传输层(Hole Transport Material, HTM)平面异质结钙钛矿太阳电池进行了模拟,TiO2作为电子传输层,CH3NH3PbI3作为光吸收层,C作为背电极,分别讨论了钙钛矿光吸收层厚度、缺陷浓度,光吸收层/HTM界面态密度和HTM对太阳电池性能参数的影响.模拟优化得到CsGeI3 HTM的PSCs最佳性能参数为:Voc=1.199 V,Jsc=22.2 mA·cm-2,FF=86.22;,PCE=22.95;,效率虽略低于spiro作为HTM的器件,但考虑生产工艺和制备成本,CsGeI3作为HTM的PSCs将具有更好的应用前景.     

利用AFORS-HET对P型HIT太阳电池的模拟优化

运用模拟软件AFORS-HET对TCO/a-Si∶ H(n)/a-Si∶ H(i)/c-Si(p)/Ag结构的异质结(HIT)太阳电池进行仿真,分析其光伏输出特性随发射层掺杂浓度、晶硅衬底掺杂浓度、透明导电氧化物薄膜(TCO)的选择以及TCO功函数的变化规律.结果显示,当发射层掺杂浓度大于1.0×1020 cm-3,晶硅衬底掺杂浓度大于1.2×1016 cm3,以ZnO为TCO层且ZnO的功函数低于4.4 eV时,电池的开路电压、短路电流密度、填充因子及电池转换效率达到最优值,光电转换效率最高达到19.18;.     

ZnO(n)/ZnSe(i)/c-Si(p)异质结太阳电池的模拟研究

近年来,HIT(heterojunction with intrinsic thin-layer)结构太阳能电池由于具有转化效率高和可低温生产等优点获得了广泛的关注,但是转化原材料成本高、生产技术条件苛刻和缺陷态控制等问题制约了其进一步的发展。本文采用AFORS-HET软件模拟了ZnO(n)/ZnSe(i)/c-Si(p)异质结太阳电池结构吸收层掺杂浓度、缺陷密度和界面缺陷态密度等参数对该结构短路电流、开路电压、填充因子和光电转换效率的影响。优化后的结果显示,当吸收层掺杂浓度为1×10²¹ cm^-3,ZnO层和c-Si层缺陷密度小于10¹⁷ cm^-3时,ZnSe/c-Si界面缺陷密度小于10²⁵ cm^-3时,该结构太阳能电池光电转换效率可达24.29%。     

梯度掺杂对n型异质结太阳能电池性能的影响

通过仿真软件AFORS-HET对a-Si:H(p)/i-a-Si:H/c-Si(n)异质结太阳能电池的光伏特性进行分析及优化,主要对比了a-Si:H(p)层的均匀掺杂和表面掺杂浓度D₁=1×10²⁰ cm^-3>界面掺杂浓度D₂=4×10¹⁹ cm^-3的梯度掺杂情况时的光伏特性,实现了在梯度掺杂时22.32%的光电转换效率。与均匀梯度掺杂相比,发射层的梯度掺杂除了引入一个附加电场,还优化了能带结构、光谱响应、表面复合速率。结果表明,梯度掺杂可以有效地改善电池的光电转换性能。     

Effect on the reduction of the barrier height in rear-emitter silicon heterojunction solar cells using Ar plasma-treated ITO film

In this study, we investigated the effect of plasma treatment on an indium tin oxide (ITO) film under an ambient Ar atmosphere. The sheet resistance of the plasma-treated ITO film at 250 W (37.6 Ω/sq) was higher than that of the as-deposited ITO film (34 Ω/sq). Plasma treatment was found to decrease the ITO grain size to 21.81 nm, in comparison with the as-deposited ITO (25.49 nm), which resulted in a decrease in the Hall mobility. The work function of the Ar-plasma-treated ITO (WF_ITO=4.17 eV) was lower than that of the as-deposited ITO film (WF_ITO = 5.13 eV). This lower work function was attributed to vacancies that formed in the indium and oxygen vacancies in the bonding structure. Rear-emitter silicon heterojunction (SHJ) solar cells fabricated using the plasma-treated ITO film exhibited an open circuit voltage (V_OC) of 734 mV, compared to SHJ cells fabricated using the as-deposited ITO film, which showed a V_OC of 704 mV. The increase in V_OC could be explained by the decrease in the work function, which is related to the reduction in the barrier height between the ITO and a-Si:H (n) of the rear-emitter SHJ solar cells. Furthermore, the performance of the plasma-treated ITO film was verified, with the front surface field layers, using an AFORS-HET simulation. The current density (J_SC) and V_OC increased to 39.44 mA/cm² and 736.8 mV, respectively, while maintaining a WF_ITO of 3.8 eV. Meanwhile, the efficiency was 22.9% at V_OC = 721.5 mV and J_SC = 38.55 mA/cm² for WF_ITO = 4.4 eV. However, an overall enhancement of 23.75% in the cell efficiency was achieved owing to the low work function value of the ITO film. Ar plasma treatment can be used in transparent conducting oxide applications to improve cell efficiency by controlling the barrier height.