Lithographic design of photosensitive polyarylates based on reaction development patterning

The factors affecting pattern‐forming properties in reaction development patterning were examined with polyarylates with various bisphenol moieties. The developability of the photosensitive polyarylates was dependent on the properties of the subtituent (R) in the bisphenol moieties. The development time decreased in the following order: R?C(CH₃)₂ > fluorenyl unit ? phenolphthalein unit > C(CF₃)₂ > SO₂. This order agreed with that of the reactivity between the polyarylates and ethanolamine, and these orders can be explained by pK_a of the bisphenol used to prepare the polyarylates. The development with NH₂? R′? OH resulted in successful positive‐tone pattern formation. However, pattern formation with the developers containing NH₂? R′? OCH₃ was unsuccessful. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2694–2706, 2006     

A polymeric photobase generator containing oxime–urethane groups: Crosslinking reaction and application to negative photoresist

A polymeric photobase generator containing oxime–urethane groups was prepared by copolymerization of methyl methacrylate and methacryloxyethyl benzophenoneoxime urethane, and its photo and thermal crosslinking reaction after irradiation was examined from the measurement of UV and IR absorption spectral changes, insoluble fraction, and molecular weight changes. The photo‐crosslinking reaction of the copolymer film was more efficient when irradiations were carried out with 310 nm UV light in the presence of benzophenone than with 254 nm UV light without the addition of benzophenone. The crosslinking reaction increased after postexposure baking (PEB), and this thermal crosslinking reaction mechanism was studied from the identification of the photolysis products of a model compound, benzophenoneoxime phenylurethane, by a high‐performance liquid chromatography. The results indicate that the thermal crosslinking reaction of the copolymer after PEB is due to the formation of urea‐type chemical bonds. Resist properties of the copolymer were examined from the measurement of normalized thickness and micropattern development. A negative tone image with a resolution of 2 μm was obtained with this copolymer, having a sensitivity (D) of 1200 mJ/cm² and contrast (γ_n) of 1.31, when irradiation was carried out with 310 nm UV light in the presence of benzophenone following chloroform development. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 975–984, 2004     

The participation of the anion and alkyl substituent of diaryliodonium salts in photo‐initiated cationic polymerization reactions

The photo‐initiated cationic polymerization (PCP) of epoxides using diaryliodonium salt photoacid generators (PAGs) bearing alkyl groups and anions was investigated. The properties and reactivities of a series of iodonium salts containing various cations and anions were compared in the context of a PCP reaction. The products from the decomposition of the cations of these salts were analyzed using gas chromatography‐mass spectrometry (GC‐MS) spectra. The relationship between the molecular structure of the salts and their reaction mechanism in the PCP reaction was investigated. Based on the results of the investigation, it was concluded that the structures of the cations and anions of theiodonium salts affect the PCP reaction rate, which was controlled by the products from the diaryliodonium salts. As part of an additional investigation, the diaryliodonium salts‐epoxide materials were applied to 254 nm‐photo‐patterning. Copyright © 2006 John Wiley & Sons, Ltd.     

Direct patterning of poly(amic acid) and low‐temperature imidization using a crosslinker,a photoacid generator,and a thermobase generator

A positive‐type photosensitive polyimide (PSPI) based on poly(amic acid) (PAA), a crosslinker 1,1,1‐tris{4‐[2‐(vinyloxy)ethoxy]phenyl}ethane (TVPE), a photoacid generator (PAG) (5‐propylsulfonyloxyimino‐5H‐thiophen‐2‐ylidene)‐2‐(methylphenyl)acetonitrile (PTMA), and a thermobase generator (TBG) t‐butyl 2,6‐dimethylpiperidine‐1‐carboxylate (BDPC) has been developed as a promising material in microelectronics. The PAA was prepared from 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA) and 4,4′‐oxydianiline (ODA) in dimethyl sulfoxide (DMSO). The PSPI, consisting of PAA (69 wt %), TPVE (21 wt %), PTMA (3 wt %), and BDPC (7 wt %), showed high sensitivity of 21 mJ/cm² and a high contrast of 6.8 when it was exposed to a 436‐nm line (g‐line), postbaked at 90 °C for 5 min, and developed with 1.69 wt % TMAHaq. A clear positive image of 8 μm line and space pattern was printed on film, which was exposed to 50 mJ/cm² of g‐line by a contact printing mode and fully converted to the corresponding polyimide (PI) pattern on heating at 200 °C, confirmed by FTIR spectroscopy. Thus, this system will be a good candidate for next generation PSPIs. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 3362–3369, 2009     

Negative‐type photosensitive poly(phenylene ether) based on poly(2,6‐dimethyl‐1,4‐phenylene ether), a crosslinker,and a photoacid generator

A negative‐type photosensitive poly(phenylene ether) (PSPPE) based on poly(2,6‐dimethyl‐1,4‐phenylene ether) (PPE), a novel crosslinker 4,4′‐methylene‐bis [2,6‐bis(methoxymethyl)phenol] (MBMP) having good compatibility with PPE, and diphenylidonium 9,10‐dimethoxy anthracene‐2‐sulfonate (DIAS) as a photoacid generator (PAG) has been developed. This resist consisting of PPE (73 wt %), MBMP (20 wt %) and DIAS (7 wt %) showed a high sensitivity (D_0.5) of 58 mJ/cm² and a contrast (γ_0.5) of 9.5 when it was exposed to i‐line (365 nm wavelength light), postexposure baked at 145 °C for 10 min, and developed with toluene at 25 °C. A fine negative image featuring 6 μm line‐and‐space pattern was obtained on the film exposed to 300 mJ/cm² of i‐line by a contact‐printed mode. The resulting polymer film cured at 300 °C for 1 h under nitrogen had a low dielectric constant (ε = 2.46) comparable to that of PPE and a higher T_g than that of PPE. In addition, the cured PSPPE film was pretty low water absorption (<0.05%) as same as PPE. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 4949–4958, 2008     

Photoinduced depolymerization of poly(olefin sulfone)s possessing photobase generator side‐chains: Effect of spacer‐chain length

Photoinduced depolymerization of poly(olefin sulfone)s possessing photobase generators in the side‐chain was investigated. Irradiation with UV light generated base on the side‐chains and induced depolymerization based on proton abstraction on the main‐chain. The effect of the length of the spacer chain, which connects the photobase‐generating moiety to the polymer main chain on the photoinduced depolymerization, also was investigated. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013 , 51, 3873–3880     

Synthesis of well‐defined and end‐polymerizable star‐shaped polysulfides and their application to negative photoresist

Various star‐shaped poly(phenoxy propylene sulfide)s (PPSs) bearing curable end groups were synthesized by the functionalization of the propagating ends of star‐shaped poly(PPS) with various electrophilies. The functionalization with chloromethyl styrene proceeded quantitatively, and afforded polymers with M_n almost agreed with theoretical value and narrow M_w/M_n. The photocuring conditions were optimized, and the addition of 10 wt % of poly(ethylene glycol) diacrylate was effective to attain sufficient crosslinking. The photocuring reaction of the end‐functionalized poly(PPS) films cast on silicon wafers was conducted by UV irradiation. The cured poly (PPS)s became insoluble in THF, supporting the sufficient crosslinking. Developing of a cured polymer yielded a negative photoresist pattern. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

Synthesis of statistical and block copolymers containing adamantyl and norbornyl moieties by reversible addition‐fragmentation chain transfer polymerization

The synthesis of statistical and block copolymers, consisting of monomers often used as resist materials in photolithography, using reversible addition‐fragmentation chain transfer (RAFT) polymerization is reported. Methacrylate and acrylate monomers with norbornyl and adamantyl moieties were polymerized using both dithioester and trithiocarbonate RAFT agents. Block copolymers containing such monomers were made with poly(methyl acrylate) and polystyrene macro‐RAFT agents. In addition to have the ability to control molecular weight, polydispersity, and allow block copolymer formation, the polymers made via RAFT polymerization required end‐group removal to avoid complications during the photolithography. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 943–951, 2010     

Three‐component negative‐type photosensitive polyimide precursor based on poly(amic acid), a crosslinker,and a photoacid generator

A new negative‐working and alkaline‐developable photosensitive polyimide precursor based on poly(amic acid) (PAA), 4,4′‐methylenebis[2,6‐bis(hydroxymethyl)]phenol (MBHP) as a crosslinker, and a photoacid generator (5‐propylsulfonyloxyimino‐5H‐thiophen‐2‐ylidene)‐2‐(methylphenyl)acetonitrile (PTMA) has been developed. PAA was prepared by ring‐opening polymerization of pyromellitic dianhydride with 4,4′‐oxydianiline. The photosensitive polyimide precursor containing PAA (65 wt %), MBHP (25 wt %), and PTMA (10 wt %) showed a clear negative image featuring 10 μm line and space patterns when it was exposed to 436 nm light at 100 mJ·cm^?2, post‐exposure baked at 130 °C for 3 min, followed by developing with a 2.38 wt % aqueous tetramethylammonium hydroxide solution at 25 °C. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 593–599, 2005     

3D Laser Micro‐ and Nanoprinting: Challenges for Chemistry

3D printing is a powerful emerging technology for the tailored fabrication of advanced functional materials. This Review summarizes the state‐of‐the art with regard to 3D laser micro‐ and nanoprinting and explores the chemical challenges limiting its full exploitation: from the development of advanced functional materials for applications in cell biology and electronics to the chemical barriers that need to be overcome to enable fast writing velocities with resolution below the diffraction limit. We further explore chemical means to enable direct laser writing of multiple materials in one resist by highly wavelength selective (λ‐orthogonal) photochemical processes. Finally, chemical processes to construct adaptive 3D written structures that are able to respond to external stimuli, such as light, heat, pH value, or specific molecules, are highlighted, and advanced concepts for degradable scaffolds are explored.