Anti-Stokes Bands of Intrinsic Radiation in Undoped GaAs Crystals

It has been established that undoped gallium crystals exhibit anti-Stokes radiation with energy corresponding to the interband recombination of these crystals. Its appearance is most probably determined by EL2 defects, and its intensity depends on the product of the cross sections for photoionization of electrons and the holes from these defects.     

Surface reconstructions of InGaAs alloys

The surface reconstructions of In_xGa_1−xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the In_xGa_1−xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence.     

Altered protein synthesis in rat kidney cells exposed to semiconductor materials

It is thought that the extensive industrial use of arsenic, gallium and indium, which have applications as the materials for III–V semiconductors, will increase human exposure to these compounds in the near future. We have undertaken the development of new biological indicators for assessing exposure to these elements. Element-specific alterations in protein synthesis patterns were expected to occur following exposure to arsenic compounds. We examined alterations in protein synthesis in primary cultures of rat kidney proximal tubule epithelial cells by sodium arsenite, gallium chloride and indium chloride, utilizing two-dimensional gel electrophoresis. After incubation with the chemicals for 20 h, newly synthesized proteins were labeled with [³⁵S]methionine. A protein with a molecular weight (M_r) of 30 000 was markedly induced on exposure to 10 μM arsenite or 300 μM gallium chloride, and synthesis of proteins with M_r values of 85 000, 71 000, 65 000, 51 000, 38 000 and 28 000 were also increased by exposure to arsenite and gallium chloride. No significant changes were observed upon exposure to indium. Some of these increased proteins could be heat-shock proteins.     

一种新型的磷化钼加氢精制催化剂的研究

通过(NH4)Mo7O24·4H2O和(NH4)2HPO4水溶液沉淀、焙烧在923K用H2还原制得磷化钼催化剂.XRD检测表明,用H2还原后有纯的磷化钼生成.在3.0MPa的高压连续微反系统中测定催化剂的加氢活性.以制备的磷化钼为活性组分、γ-Al2O3为稀释剂,考察了空速、反应温度和反应时间对模型化合物的HDN、HDS和HDY性能的影响,结果表明:在合适的条件下,其脱硫脱氮率可达到90%以上.模型化合物为吡啶、噻吩和环己烯,吡啶含量以N计(为0.2%)、噻吩含量以S计(为0.3%),环己烯含量为20%,以环己烷作溶剂.     

吡啶二甲酸镓、铟配合物的合成及生物活性

吡啶二甲酸能与过渡、非过渡、镧系和锕系金属离子螯合形成稳定的配合物，而且配位方式不拘一格，既可以是双齿，三齿，也可以是桥式配位。吡啶二甲酸的另一重要意义在于它们的生物活性。由于镓具有抗癌，抗肿瘤的活性，吡啶二甲酸镓配合物可能会是一种非常有潜力的新型药物。基于上述事实，本文合成了六种新型的吡啶二甲酸（2，3-，2，5-，2，6-）镓（Ⅲ）、铟（Ⅲ）配合物，并进一步测试了三种镓配合物的生物活性。     

n—InP在Fe^3＋／Fe^2＋溶液中光脉冲暂态行为（Ⅳ）

研究了波长、温度及表面处理对ｎ－ＩｎＰ光脉冲暂态行为的影响。结果表明，波长对时间常数无影响；随着温度升高，峰值下降，衰减变快。讨论了表面处理的影响，并对实验结果作了必要的解释。     

Phase Relations in the Ni–Mn–Ga Ternary System and Aging Effect on Shape Memory Properties of Ferromagnetic Ni<Subscript>2</Subscript>MnGa Sputtered Films

Summary. Isothermal sections of the Ni–Mn–Ga ternary phase diagram at 1073 and 1273 K were investigated over a wide range of alloy compositions. The range of the β-Ni₂MnGa phase, its equilibria with the γ-(Mn, Ni), α′-Ni₃Ga, and γ-Ni₃Ga₂ phases, and the liquidus and solidus lines were determined experimentally. The aging effect on the shape memory effect (SME) of Ni₂MnGa sputtered films was also investigated. The two-way SME of the constraint-aged films was confirmed by the temperature change.     

M_nP_m~+原子簇结构的ab initio从头算(M=Cr,Mn,n=1～3,m=2～12)

应用ahinitio计算程序，我们对飞行时间质谱产生的谱图进行了理论分析。稳定的MnnPm+和CrnPm+的结构基本上是多面体，仅有少数结构为环状和平面的。在计算中，我们尚未发现有链状的簇合物，这与风簇绝大多数是多面体是相一致的。因此，单枚金属簇合物的形成机制很大可能是金属进入磷形成的笼簇中。一般地说，除了磷的个别笼状团簇外，金属和磷相互成键是普遍存在的；在二核、多核金属磷簇合物中，金属间相互作用不常见，绝大多数是通过桥磷相连的。     

GaPO4 high temperature crystal microbalance demonstration up to 720°C

Quartz-homeotypic gallium (ortho-) phosphate, GaPO₄, is of special interest for resonator applications asking for temperature compensated cuts with higher electro-mechanical coupling than quartz and operational temperatures up to 970°C. The crystal microbalance technique, well known for quartz (QCM) which can be used only at moderate temperatures, can now be extended to much higher temperatures using GaPO₄ crystals, benefiting from all three advantages mentioned above. Two different experiments were done to demonstrate the advantages of a crystal microbalance based on GaPO₄. First, the GaPO₄ resonator was used for film thickness determination and compared with a commercial QCM. This experiment demonstrated that the measuring range can be extended by using GaPO₄ resonators instead of quartz. The second experiment demonstrates the possibility for thermogravimetric analysis up to 720°C by using a new concept for resonator mounting.This revised version was published online in November 2005 with corrections to the Cover Date.