Monte Carlo study of interfacial silicon suboxide layers and oxidation kinetics

A simple simulation scheme that simultaneously describes the growth kinetics of SiO₂ films at the nanometer scale and the SiO_x/Si interface dynamics (its extent, and spatial/temporal evolution) is presented. The simulation successfully applies to experimental data in the region above and below 10 nm, reproduces the Deal and Grove linear-parabolic law and the oxide growth rate enhancement in the very thin film regime (the so-called anomalous region). According to the simulation, the oxidation is governed mainly by two processes: (a) the formation of a transition suboxide layer and (b) its subsequent drift towards the silicon bulk. We found that it is the superposition of these two processes that produces the crossover from the anomalous oxidation region behavior to the linear-parabolic law.     

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E_g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E_g1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time.     

Influence of buffer layer thickness on the structure and optical properties of ZnO thin films

A series of ZnO thin films were deposited on ZnO buffer layers by DC reactive magnetron sputtering. The buffer layer thickness determination of microstructure and optical properties of ZnO films was investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. XRD results revealed that the stress of ZnO thin films varied with the buffer layer thickness. With the increase of buffer layer thickness, the band gap edge shifted toward longer wavelength. The near-band-edge (NBE) emission intensity of ZnO films deposited on ZnO buffer layer also varied with the increase of thickness due to the spatial confinement increasing the Coulomb interaction between electrons and holes. The PL measurement showed that the optimum thickness of the ZnO buffer layer was around 12 nm.     

无催化纳米氧化锌的制备及其光学性质研究

本文采用无催化剂直接蒸发高纯Zn粉,在800℃氧气氛条件下,在Si(111)衬底上生长得到以四角状为主的纳米ZnO(T-ZnO)。T-ZnO纳米线每个角约互成110°,长度约为1.5μm,直径100nm左右;Raman分析表明E2(H)普遍存在于各形态的ZnO;光致发光光谱表明,T-ZnO纳米线的光致发光除了与材料性质有关,还与杂质缺陷有关,蓝绿光带是ZnO的缺陷产生的。     

Effect of Ba and Bi doping on the synthesis and sintering of Ge-based apatite phases

Recently, high oxide ion conduction has been observed in the apatite-type systems La_9.33+x(Si/Ge)₆O_26+x/2, with conductivities approaching and even exceeding that of yttria-stabilized zirconia. The Ge-based phases have been reported to suffer from Ge loss and undergo irreversible structural changes on sintering at the high temperatures required to obtain dense pellets. In this paper we discuss doping studies (Ba, Bi for La) aimed at stabilizing the hexagonal apatite lattice to high temperature, and/or lowering the synthesis and sintering temperatures. The results show that doping with Ba helps to stabilize the hexagonal lattice at high temperatures, although Ge loss appears to still be a problem. Conductivity data show that, as previously reported for the Si-based systems, non-stoichiometry in the form of cation vacancies and/or oxygen excess is required to achieve high oxide ion conduction in these Ge-based systems. Neutron diffraction structural data for the fully stoichiometric phase La₈Ba₂Ge₆O₂₆ shows that the channel oxygen atoms show little anisotropy in their thermal displacement parameters, consistent with the low oxide ion conductivity of this phase. Bi doping is shown to lower the synthesis and sintering temperatures, although the presence of Bi means that these samples are not stable at high temperatures under reducing conditions.Presented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, April 10–12, 2003     

Crystal structure and ionic conductivity of the series A2Bi24Mo8X2O68 (A = Ca, Sr and Ba and X = Cr and W) in the Bi2O3?MoO3 system

A series of A₂Bi₂₄Mo₈X₂O₆₈ compounds, Ca₂Bi₂₄Mo₈Cr₂O₆₈ (CBMC), Sr₂Bi₂₄Mo₈Cr₂O₆₈ (SBMC), Pb₂Bi₂₄Mo₈Cr₂O₆₈ (PBMC) and Ba₂Bi₂₄Mo₈W₂O₆₈ (BBMW) have been synthesized by the solid-state method and characterized by single crystal X-ray diffraction. The compounds index into the monoclinic P2/c system with a=11.687(4) ?, 5.784(2) ?, 24.728(9) ?, 101.911(6)°, Z=1; 11.673(6) ?, 5.775(3) ?, 24.670(2) ?, 101.757(8)°, Z=1; 11.638(3) ?, 5.790(1) ?, 24.655(6) ?, 101.716(4)°, Z=1 and 11.718(6) ?, 5.818(3) ?, 24.716(12) ?, 101.835(9)°, Z=1 for CBMC, SBMC, PBMC and BBMW, respectively. The structures were solved by direct methods and refined to R indices of 0.081, 0.065, 0.080 and 0.079 respectively. These compounds are isostructural with Bi₂₆Mo₁₀O₆₉ and the structure consists of columns of [Bi₁₂O₁₄] along the b-axis, surrounded by Mo/Cr/WO₄ tetrahedra. a.c. impedance studies indicate higher values of ionic conductivity for the tungsten-substituted compounds. Supplementary material The crystal data of CBMC, SBMC, PBMC and BBMW have been deposited at the Fachinformationszentrum Karlsruhe (FIZ) with the numbers CSD 415143, CSD 415145, CSD 415144 and CSD 415142, respectively.     

RuO2 electrode surface effects in electrocatalytic oxidation of glucose

We have studied the electrocatalytic activity of RuO₂-PVC film electrodes, fabricated using RuO₂ powders prepared at five different temperatures, viz., 300, 400, 500, 600 and 700°C, for the oxidation of glucose in high alkaline media, 1 to 3 M NaOH. The RuO₂-PVC film electrodes have been first characterized in 1 to 3 M NaOH solution by cyclic voltammetry (CV) and rotating disc electrode (RDE) techniques in a wide potential range −1,100 to 450 mV (SCE), and three redox pairs representing Ru(IV)/Ru(III), Ru(VI)/Ru(IV) and Ru(VII)/Ru(VI) transitions have been identified. The voltammetric peaks at low sweep rates have been analyzed using surface activity theory formulated for interacting electroactive adsorption sites, and interaction terms have been evaluated. The total voltammetric surface charges have been analyzed as per Trassatti’s formalism with respect to their dependence on potential sweep rate, and charges associated with less accessible and more accessible surface sites have been calculated. For glucose oxidation, the results have indicated that RuO₂ (700°C)-PVC electrode shows two oxidation peaks in contrast to RuO₂ (300°C)-PVC electrode. Also, RuO₂ (700°C)-PVC electrode exhibits higher intrinsic electrocatalytic activity than the 300°C electrode, although the former possesses lower electrochemically active surface area. Additionally, kinetic analyses made from RDE results with reference to Michealis–Menten (MM) enzyme catalysis has shown that RuO₂ (700°C) electrode possesses extended glucose-sensing range in terms of MM kinetic constant, K _M , compared to other electrodes. Possible reasons for such differences in the behavior of the electrodes of different temperatures towards glucose oxidation are identified from studies on oxidation of glucose in solutions of different pH, oxidation of different glucose derivatives, and also from physicochemical results from BET, XRD, SEM, DTGA, XPS analysis of RuO₂ powder samples.     

Preparation and properties of rare-earth containing oxide fluoride glasses

The preparation of the rare earth containing oxide fluoride glasses LnF₃ (Ln; Y through Lu)-BaF₂-AlF₃-GeO₂ in which the nominal content of LnF₃ reached 60 mol% in maximum and their basic properties such as density, refractive index and glass transition temperature were investigated and summarized in detail. Especially, in order to discuss the local structure around the rare earth ion in the glass, the Judd-Ofelt analysis (discussion with Ω parameters) of the HoF₃-BaF₂-AlF₃-GeO₂ glasses was carried out. The unique fluorescent behavior and the magnetic properties of LnF₃-BaF₂-AlF₃-GeO₂ glasses (Ln = Tb and/or Sm) were also studied.     

Shear and NMR experiments of materials with flow behaviour depending on the deformation history

Oxide ceramic masses react to simple shearing with hardening (peptisation: increase in the shear stress with the shear deformation). In the present study the correlation between the increase in the shear stress and the porosity, agglomeration processes and the type of flow are analysed. For this purpose oxide ceramic masses are tested in a shear device especially developed for pastes and analysed by rheometric experiments, NMR methods and particle size analysis. The results support the hypothesis that structural changes (hardening, increase in the mean porosity) of the material during the peptisation mainly depend on the magnitude and not on the kind of the energy input and thus of the type of flow. The fraction of bound (more generally, the immobilised) water increases with the shear displacement. Also crushing of primary particles could be observed. Both the crushing of solid particles causing an increased solid surface and the formation of a three-dimensional gel structure are microscopic effects capable of resulting in the binding or retaining water. On a macroscopic scale these phenomena cause hardening. Magnetic resonance imaging visualises flow-induced agglomerates, which form owing to the shear flow and increase the porosity averaged over the whole sample. After the shear experiment rolls of paste can be seen which indicate that the general assumption of a plane shear flow in the shear device is not warrantable. Received: 19 July 2001 Accepted: 25 October 2001     

The Effects of M2O3 on Stabilizing Monocopper over the Surface of Cu-ZnO-M2O3 Catalysts for Mathanol Synthesis

The effects of M₃O₃ (M = Al, Sc etc.) in Cu-ZnO-M₂O₃ catalysts on methanol synthesis at low pressure were studied with ESR, XPS and TPR spectroscopy. The results of ESR showed that the generation of monovalent cationic defects was because the valence state and electronic charge on the ZnO lattice lost their balance as M³⁺ doped into ZnO. The induced effect by Sc³⁺ is stronger than that by Al³⁺. The results of XPS and TPR indicated that the amount and stabilization of Cu⁺ on the surface of reduced copper-based catalyst and its catalytic activity were affected by the monovalent cationic defects on the surface of ZnO.