Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

We discuss the spectral lineshapes of reflectance and modulated reflectance (MR) measurements on optoelectronic device structures such as epi-layers, quantum wells (QWs), vertical-cavity surface emitting-lasers (VCSELs) and resonant-cavity light-emitting diodes (RCLEDs). We consider the various methods for the extraction of built-in electric fields and band-gap energies from Franz-Keldysh oscillations (FKO), using the example of a tensilely strained InGaAs QW system, whose InGaAsP barriers yield strong FKO. We describe how critical point transition energies can be easily obtained by eye from Kramers-Kronig (KK) transforms of low field or QW modulation spectra, using the example of the modulated transmittance spectra of dilute-nitrogen InGaAsN p-i-n structures. We also discuss how the ordinary reflectivity spectrum, usually acquired at the same time as the MR signal, may also be exploited to extract layer thicknesses and compositions, and information about the active QW absorption spectrum in VCSEL and RCLED structures.     

Laser nanosources based on planar photonic crystals as new platforms for nanophotonic devices

Two-dimensional photonic crystal lasers have been fabricated on III–V semiconductor slabs. Tuning of the spontaneous emission in micro and nanocavities has been achieved by accurate control of the slab thickness. Different structures, some of them of new application to photonic crystal lasers, have been fabricated like the Suzuki-phase or the coupled-cavity ring-like resonators. Laser emission has been obtained by pulsed optical pumping. Optical characterization of the lasing modes have been performed showing one or more laser peaks centred around 1.55 μm. Far field characterization of the emission pattern has been realized showing different patterns depending on the geometrical shape of the structures. These kinds of devices may be used as efficient nanolaser sources for optical communications or optical sensors.     

Versatile wideband balanced detector for quantum optical homodyne tomography

We present a comprehensive theory and an easy to follow method for the design and construction of a wideband homodyne detector for time-domain quantum measurements. We show how one can evaluate the performance of a detector in a specific time-domain experiment based on the electronic spectral characteristic of that detector. We then present and characterize a high-performance detector constructed using inexpensive, commercially available components such as low-noise high-speed operational amplifiers and high-bandwidth photodiodes. Our detector shows linear behavior up to a level of over 13 dB clearance between shot noise and electronic noise, in the range from DC to 100 MHz. The detector can be used for measuring quantum optical field quadratures both in the continuous-wave and pulsed regimes with standard commercial mode-locked lasers.     

温度对Al0.5Ga0.5As/AlAs分布布喇格反射器的反射谱影响

采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了－10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明：随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出：该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.     

Metal grid technologies for flexible transparent conductors in large-area optoelectronics

Mechanically flexible optoelectronic devices such as flexible displays, touch-screens, wearable electronics and solar cells are attracting significant commercial interest. In these devices, a transparent conductor is an essential element that delivers or collects the electrical current to the active material while it allows light to enter or exit from the device. The transparent conductor is composed of a transparent conductive film and a metallic grid providing electrical conduction over the large area. In this article, we review the established processes used by the industry as well as emerging solution-based methods for processing metal grids. Furthermore, we review the issues and potentials of these emerging processes facing for large-area deployment. In the final section, we evaluate three applications of flexible transparent conductors in: perovskite-based solar cells, organic light emitting diodes and electrochromic windows.     

Metal-acetylide addition to tetracyanoethylene

Two push-pull chromophores that have shown utility in the field of molecular electronics and non-linear optics are DDMEBT (1, 2-(4-dimethylamino)phenyl)-3-((4-(dimethylamino)phenyl)ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile) and TDMEE (2, 4-(4-dimethylamino)phenyl)but-1-en-3-yne-1,1,2-tricarbonitrile). Unfortunately, the methods reported for their synthesis give variable yields, use toxic solvents, and only provide small amounts of material. We report improved synthetic protocols, providing access to larger quantities of material. By investigating multiple metal-acetylides of 4-ethynyl-N,N-dimethylaniline and their subsequent addition to TCNE, we obtained various products depending on the identity of the metal ion. This led to the simple synthesis of push-pull chromophoric compounds.     

Synthesis and photophysical properties of tetrafluorophenyl-modified carbazole oligomers

A series of tetrafluorophenyl-modified oligo(3,6-carbazole ethynylene)s (CfCzCf, CfCz2Cf, CfCz3Cf, (CfCz)2Cf, and Cf2CzCf2) were synthesized by a Pd/Cu-catalyzed Sonogashira coupling reaction and fully characterized. Their photophysical and electronic properties as well as their thermal stabilities were investigated. It is noteworthy that these tetrafluorophenyl modified compounds showed relative thermal stabilities and low-lying HOMO levels ranging from −5.54 to −5.60 eV, which might be the promising candidates for hole-transporting materials in OLEDs.     

AlGaAs capping effect on InAs quantum dots self-assembled on GaAs

The effects of AlGaAs capping on InAs quantum dots self-assembled on GaAs are investigated. It is observed that, the photoluminescence intensity becomes stronger up to twice when Al is incorporated into the cap layer. In the mean time, the full width at half maximum of the photoluminescence spectrum becomes narrower, the peak splitting between the ground and first excited exciton levels becomes wider, and the photoluminescence peak wavelength becomes longer. With considerations of the increased barrier height and the changed microstructures of the quantum dots induced by AlGaAs capping, the mechanisms of the observed improvements are discussed.     

Doped nanocrystalline materials — Physics and applications

The properties and applications of nanocrystals doped with transition and rare-earth impurities are reviewed. The high efficiency and ultrafast recombination times observed in these doped nanocrystals make these materials very attractive for optoelectronic applications.     

Synthesis of hybrid organic-inorganic perovskite platelets by vacuum impregnation

In perovskite solar cells and optoelectronics, perovskite film morphology controls the performance of the device. Various methods have been developed to control the morphology and coverage of the perovskite films. In this article platelet type perovskite morphlogy was synthesized using low temperature vacuum impregnation of the perovskite solution CH₃NH₃PbI₃ resulting in complete coverage on TiO₂ film. Vacuum impregnation synthesis of perovskites has the advantage of low cost and low temperature which faciliates application in flexible electronics and solar cells.