条带织构装饰技术观察含T─型液晶基元的热致性聚芳酯液晶态的向错

采用条带织构装饰新技术研究了含Ｔ─型液晶基元的热致性聚芳酯液晶态的向错形态．经过培养的液晶样品无需剪切，淬火后便可呈现出围绕向错点取向排列的条带织构，而条带织构长轴的垂直方向正代表了液晶基元的指向矢方向，这样，在普通偏光显微镜下就能直接观察到这些条带织构装饰的强度Ｓ＝±１／２和Ｓ＝±１的向错，并观察到Ｓ＝－３／２的高强度向错和闭环状的反转壁．     

芳香共聚酯B-N多种向列织构的形态研究

从一种聚芳酯B-N得到了丝状(包括细丝和粗丝)、纹影状和大理石纹状等与小分子向列液晶相似的多种织构。由于样品淬火后晶片装饰在织构上而不影响分子取向矢的分布,因而可以用化学刻蚀和电镜技术揭示其向错和取向矢图。电镜和光学显微镜的结果相互补充,表明了细丝和粗丝状织构的分子取向矢分布很不相同,是两种不同的织构,而粗化始于第二熔融降温。在这些向列织构中分别发现了S=±(1/2)和s=+1的向错的例子和平面内微区转向壁的证据。     

条带织构装饰技术观察含T─型液晶基元的热致性聚芳酯液晶态的向错

采用条带织构装饰新技术研究了含Ｔ─型液晶基元的热致性聚芳酯液晶态的向错形态．经过培养的液晶样品无需剪切，淬火后便可呈现出围绕向错点取向排列的条带织构，而条带织构长轴的垂直方向正代表了液晶基元的指向矢方向，这样，在普通偏光显微镜下就能直接观察到这些条带织构装饰的强度Ｓ＝±１／２和Ｓ＝±１的向错，并观察到Ｓ＝－３／２的高强度向错和闭环状的反转壁．     

Effect of the thermal history on the phase transition and the liquid crystalline structure of thermotropic polyesters

A series of triad type thermotropic polyesters based on phenylsulfonyl hydroquinone and α,ω-bis(4-carboxyphenoxy)alkane was prepared, and the effect of the thermal history on the phase transition and the liquid crystalline structure of the polyesters was studied. The phase transition was significantly affected by the thermal history. When annealed at various temperatures, multiple endotherms were observed for all polyesters in DSC thermograms. A phase stability concept was employed to explain the complicated phase transitions. The time evolution of the liquid crystalline structure was investigated by optical microscopy and transmitted light intensity measurement under crossed polars during annealing. The steady decrease in the density of disclinations with accompanying increase of transmitted light intensity was observed. Depending on the surface conditions of the liquid crystal polymer film, two markedly different domain growth patterns and different textures were found on isothermal annealing; the continuous wormlike texture and the discontinuous droplet texture. The structural relaxation of the deformed texture during annealing was also studied. When shear was applied, the characteristic banded texture was formed in all polyesters.     

高分子液晶向列相的向错结构

高分子液晶态向错结构在正交偏振片下呈现出具有不同数目黑刷子的纹影织构，是由于分子指向矢取向排列上的不连续性所引起的一种光学效应。近年来，高分子液晶态向错结构的研究已取得了较大进展，发展和应用片晶装饰、条带织构装饰和表面裂纹装饰等技术可以在电镜和偏光显微镜下直接观察各种向错结构。本文简要介绍高分子液晶态向列相的向错和反转壁结构的几何学、高强度向错以及近年在实验上观察各类型向错形态的研究进展。     

Analysis of dislocation wall formation in a disclinated nanograin

Disclinations are common defects in nanocrystalline materials processed via the severe plastic deformation technique. A disclination, depending on its strength, may remain stable or partially relax into other structures such as cracks and dislocation walls. This paper develops closed-form analytical expressions for the energy of a nanograin containing a negative wedge disclination and a wall of periodic edge dislocations. Using these expressions, it is found that (1) a critical disclination strength is required for emitting dislocations and that this critical value demonstrates a strong power law dependence on the nanograin size, (2) there exists a favorable dislocation spacing, which decreases with increase in the disclination strength, in the dislocation wall formed by the emitted dislocations, and (3) the misorientation of the dislocation wall lies between 5° and 12° for disclination strength in the range of 15–35°.     

Topological and non inertial effects on the interband light absorption

In this work, we investigate the combined influence of the nontrivial topology introduced by a disclination and non inertial effects due to rotation, in the energy levels and the wave functions of a noninteracting electron gas confined to a two-dimensional pseudoharmonic quantum dot, under the influence of an external uniform magnetic field. The exact solutions for energy eigenvalues and wave functions are computed as functions of the applied magnetic field strength, the disclination topological charge, magnetic quantum number and the rotation speed of the sample. We investigate the modifications on the light interband absorption coefficient and absorption threshold frequency. We observe novel features in the system, including a range of magnetic field without corresponding absorption phenomena, which is due to a tripartite term of the Hamiltonian, involving magnetic field, the topological charge of the defect and the rotation frequency.     

Electronic structure of disordered graphene with Greenʼs function approach

The Green functions play a big role in the calculation of the local density of states of the carbon nanostructures. We investigate their nature for the variously oriented and disclinated graphene-like surface. Next, we investigate the case of a small perturbation generated by two heptagonal defects and from the character of the local density of states in the border sites of these defects we derive their minimal and maximal distances on the perturbed cylindrical surface. For this purpose, we transform the given surface into a chain using the Haydock recursion method. We will suppose only the nearest-neighbor interactions between the atom orbitals, in other words, the calculations suppose the short-range potential.     

Nanoscale rotational deformation effect on dislocation emission from an elliptically blunted crack tip in nanocrystalline materials

A grain size-dependent model is theoretically established to describe the effect of a special physical micromechanism of plastic flow on the dislocation emission from an elliptical blunt crack tip in nanocrystalline solids. The micromechanism represents the fast nanoscale rotational deformation (NRD) occurring through collective events of ideal nanoscale shear near crack tips, which as a stress source is approximately equivalent to a quadrupole of wedge disclinations. By the complex variable method, the grain size-dependent criterion for the dislocation emission from an elliptical blunt crack tip is derived. The influence of the grain size and the features of NRD on the critical stress intensity factors for dislocation emission is evaluated. The results indicate that NRD releases the high stresses near the crack tip region and thereby enhances the critical stress intensity factor for dislocation emission. The NRD has great influence on the most probable angle for dislocation emission. The critical stress intensity factor will increase with the increment of the grain size, which means the emission of the dislocation becomes more difficult for larger grain size due to the effect of NRD.     

Defects in gradient micropolar elasticity—II: edge dislocation and wedge disclination

A theory of gradient micropolar elasticity based on first gradients of distortion and bend-twist tensors for an isotropic micropolar medium has been proposed in Part I of this paper. Gradient micropolar elasticity is an extension of micropolar elasticity such that in addition to double stresses double couple stresses also appear. The strain energy depends on the micropolar distortion and bend-twist terms as well as on distortion and bend-twist gradients. We use a version of this gradient theory which can be connected to Eringen's nonlocal micropolar elasticity. The theory is used to study a straight-edge dislocation and a straight-wedge disclination. As one important result, we obtained nonsingular expressions for the force and couple stresses. For the edge dislocation the components of the force stress have extremum values near the dislocation line and those of the couple stress have extremum values at the dislocation line and for the wedge disclination the components of the force stress have extremum values at the disclination line and those of the couple stress have extremum values near the disclination line.