基于光学传输矩阵的太赫兹时域光谱分析

提出了基于光学传输矩阵的提取太赫兹时域光谱光学参数的理论方法。相比于传统的提取主脉冲方法,该方法在未来可以推广用以分析主脉冲与次脉冲无法分辨的太赫兹时域光谱。利用该方法得到了蓝宝石(α-Al2O3)样品在0.3~1.0太赫兹频段的复折射率。通过与利用提取主脉冲方法得到的复折射率的结果比较,验证了基于光学传输矩阵的理论分析方法的可靠性和精确性。所提出的方法为今后主次脉冲无法分辨的太赫兹时域光谱的准确分析提供了坚实的理论基础。     

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition （MOCVD）. Microstructural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1 （LO） of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors.     

Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method （MOCVD） Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and FeN compounds which we have not detected.