基于高光谱分析的玉米叶片氮含量分层诊断研究

为了明确不同生育时期进行玉米氮素营养诊断的叶片层位,建立准确稳健的玉米氮素营养诊断模型,以达到合理追施氮肥,提高氮肥利用率的目的。试验采用单因素盆栽试验设计,以玉米（郑单958）为研究对象,应用高光谱技术,分析了不同氮营养水平下不同生育时期不同层位玉米叶片的氮含量分布和变化规律及光谱响应特征;并依据叶片氮含量与光谱反射率的相关关系,叶片氮含量与全波段(400～2 000 nm)任意两两波段组合构建的比值光谱指数(RSI)的回归关系,初步确定了不同生育时期进行氮素营养高光谱诊断的目标叶片,筛选出最优的比值光谱指数,建立了叶片氮素含量估算模型。结果表明：玉米叶片氮含量：上层>中层>下层;随着玉米的生长,在低氮条件下上层叶片氮含量呈先减少后增加（追肥）再减少趋势,在高氮条件下呈减少趋势,中下层叶片氮含量呈递减趋势。六叶期下层玉米叶片光谱反射率敏感范围较大,相关性较强;九叶期和灌浆期上层玉米叶片的光谱反射率敏感范围较广,相关性较强;开花吐丝期中层叶片的光谱反射率敏感范围较大,相关性较强。六叶期选取下层叶作为诊断目标叶,选取最佳比值光谱指数RSI(1 811, 1 842)建立线性估算模型,九叶期和灌浆期选取上层叶片作为诊断目标叶,选取的最佳比值光谱指数分别为RSI(720, 557),RSI(600, 511)建立线性估算模型,开花吐丝期选取中层叶片作为诊断目标叶,选取比值光谱指数RSI(688, 644)建立线性估算模型。研究结果可为快速准确地利用光谱技术进行玉米叶片氮素营养诊断提供理论依据。     

玉米叶片的光谱响应及其氮素含量预测研究

以不同施肥水平下两年玉米田间试验为基础,利用高光谱技术探讨大喇叭口期不同层次玉米叶片光谱响应的敏感区域,并依据叶片氮素含量与原始光谱反射率及其一阶导数的相关性,最终构建了叶片氮素含量的预测模型。结果表明：不同施肥水平下叶片光谱反射率差别明显区域集中在550 nm附近波段、761～1 300 nm波段,不同层次间叶片光谱反射率差别明显区域集中在550 nm附近波段,叶片氮素含量与470～760 nm波段光谱反射率及其一阶导数呈极显著相关。经过对比筛选,以光谱指数DSI(564,681)和DSI(681,707)构建的指数预测模型效果最好,预测精度达93.43%和93.39%,能有效估测叶片氮素含量。     

基于大样本土壤光谱数据库的氮含量反演

充分挖掘大样本土壤光谱库中有效信息,建立普适性强的土壤全氮(TN)含量反演模型,是高光谱分析的重要应用方向之一。研究采用偏最小二乘回归(PLSR)全局建模、局部加权回归(LWR)和模糊K均值聚类结合PLSR(FKMC-PLSR)局部建模三种方法,分别建立了来自中国西藏、新疆、黑龙江、海南等13个省采集的17种土类1661个土壤样本TN值的高光谱反演模型,并对浙江省104个水稻土样本进行模型验证。结果表明,在大样本下PLSR全局模型对高TN值待预测样本存在低估现象,导致整体预测精度偏低;LWR和FKMC-PLSR局部模型比PLSR全局模型能够更为准确地反演TN含量。研究结果可为利用大样本光谱数据库建立稳定性和普适性较高的土壤TN含量预测模型提供参考。     

微观相场法模拟Ni75Al5.3V19.7中L12和D022结构反位缺陷的演化

运用微观相场法研究Ni75Al5.3V19.7合金沉淀过程中L12结构和D022结构反位缺陷发现:在沉淀初期,L12结构反位缺陷AlNi,Vni,NiA1,D022结构反位缺陷Vni,AlNi,Ni,AlV的浓度均从初始高度反位状态随沉淀过程的进行逐渐减小并趋于一平衡值;沉淀中后期,L12结构和D022结构长大,反位缺陷浓度始终保持平衡,平衡时L12结构的α格点反位缺陷AlNi,Vni,D022结构的α格点反位缺陷VNI,AlNI的浓度均在10-2数量级,Ll2结构和D022结构的β格点的反位缺陷NiA1,NiV,的浓度在10-1数量级,NiAl,NiV反位缺陷分别是这两种结构的主要反位缺陷类型;第三组元在有序相中有择优占位倾向,V原子优先占据L12:结构的β格点,Al原子优先占据D022结构的α格点.     

Ni75Cr25-xAlx合金中L12相和D022相形核孕育期的微观相场模拟

基于微观相场动力学模型,运用原子图像、平均长程序参数和平均成分偏离序参数,研究了Al浓度对Ni75Cr25-xAlx合金中L12相和D022相形核孕育期的影响以及孕育期与沉淀相析出顺序之间的关系.结果表明,L12相和D022相的形核孕育期不仅与Al浓度有关,而且与两相析出的先后顺序密切相关.当Al浓度小于7.5%时,先析出相为D022相,随着Al浓度的增大,D022相形核孕育期延长,后析出的L12相的形核孕育期也延长,L12相的原子簇聚速度加快;当Al浓度大于7.5%时,先析出相为L12相,随着Al浓度的增大,L12相的形核孕育期缩短,后析出的D022相形核孕育期也缩短.当Al浓度为7.5%时,L12相和D022相几乎同时析出,两者的孕育期没有明显的差别.     

Unifying the crystallization behavior of hexagonal and square crystals with the phase-field-crystal model

By employing the phase-field-crystal models, the atomic crystallization process of hexagonal and square crystals is investigated with the emphasis on the growth mechanism and morphological change. A unified regime describing the crystallization behavior of both crystals is obtained with the thermodynamic driving force varying. By increasing the driving force, both crystals(in the steady-state) transform from a faceted polygon to an apex-bulged polygon, and then into a symmetric dendrite. For the faceted polygon, the interface advances by a layer-by-layer(LL) mode while for the apex-bulged polygonal and the dendritic crystals, it first adopts the LL mode and then transits into the multi-layer(ML)mode in the later stage. In particular, a shift of the nucleation sites from the face center to the area around the crystal tips is detected in the early growth stage of both crystals and is rationalized in terms of the relation between the crystal size and the driving force distribution. Finally, a parameter characterizing the complex shape change of square crystal is introduced.     

First principle study of edge topological defect-modulated electronic and magnetic properties in zigzag graphene nanoribbons

Zigzag graphene nanoribbon(ZGNR) is a promising candidate for next-generation spintronic devices. Development of the field requires potential systems with variable and adjustable electromagnetic properties. Here we show a detailed investigation of ZGNR decorated with edge topological defects(ED-ZGNR) synthesized in laboratory by Ruffieux in 2015[Pascal Ruffieux, Shiyong Wang, Bo Yang, et al. 2015 Nature 531 489]. The pristine ED-ZGNR in the ground state is an antiferromagnetic semiconductor, and the acquired band structure is significantly changed compared with that of perfect ZGNR. After doping heteroatoms on the edge, the breaking of degeneration of band structure makes the doped ribbon a half-semi-metal, and nonzero magnetic moments are induced. Our results indicate the tunable electronic and magnetic properties of ZGNR by deriving unique edge state from topological defect, which opens a new route to practical nano devices based on ZGNR.     

Phase-field study of the second phase particle effect on texture evolution of polycrystalline material

The second phase particle effect on texture evolution of polycrystalline material is studied through phase-field method. A unique field variable is introduced into the phase-field model to represent the second phase particles. Elastic interaction between particles and grains is also considered. Results indicate that in the presence of second phase particles the average particle diameter turns smaller than in the absence of these particles and retards texture formation by pinning effect. The second phase particles change the strain energy profile, which tremendously influences the pinning effect.     

Antisite Defects of the L12 Structure Determined by the Phase Field Microelasticity Model

A phase field microelasticity simulation is performed to examine the antisite defect of L12-Ni3Al in Ni75Al5.3 V19.7 ternary alloy. Combinimg strain energy with the phase field model leads to an atom configuration change as time proceeds. For the Ni sublattice, the antisite defect AlNi, the equilibrium occupancy probability （OP） of which declines, precedes NiNi and VNi in reaching equilibrium; subsequently, NiNi and VNi present a phenomenon of symmetrical rise and decline individually. Similarly, for the Al sublattice, the antisite defect NiAl, the OP of which eventually rises, takes fewer time steps than AlAl and VAl to attain equilibrium. Thereafter, AlAl rises while VAl declines symmetrically at the axes of the NiAl curve. Furthermore, the OP for the Al sublattice is much more sensitive to strain energy than that for the Ni sublattice.     

Quantitative determination of anti-structured defects applied to alloys of a wide chemical range

Anti-structured defects bridge atom migration among heterogeneous sublattices facilitating diffusion but could also result in the collapse of ordered structure.Component distribution Ni_(75)Al_xV_(25-x) alloys are investigated using a microscopic phase field model to illuminate relations between anti-structured defects and composition,precipitate order,precipitate type,and phase stability.The Ni_(75)Al_xV_(25-x) alloys undergo single Ni_3V(stage Ⅰ),dual Ni_3Al and Ni_3V(stage Ⅱ with Ni_3V prior;and stage Ⅲ with Ni_3Al prior),and single Ni_3Al(stage Ⅳ) with enhanced aluminum level.For Ni_3V phase,anti-structured defects(V_(Ni1),Niy,except V_(Ni2)) and substitution defects(Al_(Ni1),Al_(Ni2),Al_v) exhibit a positive correlation to aluminum in stage I,the positive trend becomes to negative correlation or smooth during stage Ⅱ.For Ni_3 Al phase,anti-structured defects(Al_(Ni),Ni_(Al)) and substitution defects(V_(Ni),V_(Al)) have a positive correlation to aluminum in stage Ⅱ,but Ni_(Al) goes down since stage Ⅲ and lasts to stage Ⅳ.V_(Ni) and V_(Al) fluctuate when Ni_3Al precipitates prior,but go down drastically in stageⅣ.Precipitate type conversion of single Ni_3V/dual(Ni_3V+Ni_3Al) affects Ni_3V defects,while dual(Ni_3V+Ni_3Al)/single Ni_3 Al has little effect on Ni_3Al defects.Precipitate order swap occurred in the dual phase region affects on Ni_3Al defects but not on Ni_3V.