Pauli Half Spinning and Elliptic Curve Based Information Confidentiality Mechanism

International Journal of Theoretical Physics - The use of digital contents has increased tremendously in this modern era. In fact, people spend more time on internet than ever which urged the...     

Isolation and structure elucidation of three glycosides and a long chain alcohol from Polianthes tuberosa Linn

Three glycosides and a long chain alcohol were isolated from the bulbs of Polianthes tuberosa, these were identified as 3,29-dihydroxystigmast-5-ene-3-O-beta-D-galactopyranoside (1), ethyl beta-D-galactopyranoside (2), ethyl-alpha-D-galactopyranoside (3), and 1-tricosanol (4). The structures were determined by extensive spectroscopic and chemical methods. All four isolated compounds were screened for their cytotoxicity, antibacterial and antifungal activities, none of the compounds showed any significant activity.     

The isoindolobenzazepine alkaloids

Three Chilean barberries, $\text{Berberis}$$\text{actinacantha}$ Mart. ex Schult., $\text{B}$. $\text{darwinii}$ Hook and [ulbar|B. $\text{valdiviana}$Phil. (Berberidaceae), have yielded several new isoindolobenzazepine and protoberberine alkaloids. Novel isoindolobenzazepines are (±)-13-deoxychilenine ($\text{a}$), pictonamine ($\text{10}$), chileninone ($\text{12}$), (±)-chileniimi ($\text{18}$) and (±)-palmanine ($\text{19}$). Highly oxidized protoberberines of particular interest include (±)-O-methylprechilenine ($\text{6}$) and (±)-prepseudopalmanine ($\text{21}$), together with 13-methoxy-8-oxyberberine ($\text{8}$). Isoindolobenzazepine alkaloids arise biogenetically from the rearrangement of highly oxidized protoberberines.     

Capacitance-voltage characteristics of In0.3Ge2Sb2Te5 thin films

The influence of indium doping on the capacitance variation with temperature and applied bias voltage of Ge₂Sb₂Te₅ is investigated. The capacitance-voltage (C-V) measurements of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ thin films were performed for a sweep of voltages from −20 to +20 V at different temperatures. The results show different capacitance behavior of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ films. As the temperature increases the capacitance of the indium-doped sample decreases and becomes negative. The negative capacitance effect might be attributed to a significant increase of the film’s conductivity due to temperature and applied bias voltage. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes close to the amorphous-crystalline transition temperature.