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M. Ahmetoglu I.A. AndreevE.V. Kunitsyna K.D. MoiseevM.P. Mikhailova Yu.P. Yakovlev 《Infrared Physics & Technology》2012,55(1):15-18
The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by diffusion mechanism. 相似文献
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M. Ahmetoglu B. Kucur I.A. Andreev E.V. Kunitsyna M.P. Mikhailova Yu.P. Yakovlev 《Infrared Physics & Technology》2010,53(5):399-403
The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Δλ/ΔT = 1.6 nm/K. Quantum efficiency of 0.6–0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 μm. 相似文献
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Muhitdin Ahmetoglu Afrailov 《Infrared Physics & Technology》2010,53(1):29-32
The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6–3.5 μm are reported. At the difference frequency, C–V measurements are showed that at small biases and temperatures which are higher than 160 K, the measured capacity is increase with decreasing frequency. It is possible to explain by presence the deep recombination centers in space charge region of the investigated structures. Have been studied the avalanche multiplication of the photocurrent and the temperature dependence of the monochromatic power–voltage sensitivity in the temperature range 77–300 K. 相似文献
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