Evolution of femtosecond laser-induced damage in doped GaN thin films

Mg- and Si-doped GaN layers deposited by metalorganic chemical vapor deposition method were irradiated with femtosecond pulse duration laser of three different wavelengths 1,030, 515 and 343 nm. Both single and multiple shot laser induced damage thresholds of doped GaN layers were evaluated and discussed. The scanning electron microscopy employed with electron beam induced current and energy dispersive X-ray techniques were used to study laser damage morphology. It was observed that ablated area and laser-induced damage increased with irradiation fluence. The mechanism of damage generation by Gaussian beam profile laser was considered.     

Dispersion production by semi-continuous radical vinyl acetate emulsion polymerization with silane co-monomer and characterization of final products

Vinyl acetate radical emulsion polymerization in water with GF51 silane co-monomer was performed by semi continuous way. The GF51 impacts on dispersion rheology as well on films and bonding strength properties were determined. It should be stated that even low quantities of GF51 (up to 6% from VAc) determined high viscosity of dispersions. The GF51 modified films have low water absorption and high affinity to glass. Molecular mass and thermal properties of GF51 modified polymers were determined accordingly.     

Transition‐Metal‐Free Cross‐Coupling of Benzothiophenes and Styrenes in a Stereoselective Synthesis of Substituted (E,Z)‐1,3‐Dienes

A transition metal‐free one‐pot stereoselective approach to substituted (E,Z)‐1,3‐dienes was developed by using an interrupted Pummerer reaction/ligand‐coupling strategy. Readily available benzothiophene S‐oxides, which can be conveniently prepared by oxidation of the parent benzothiophenes, undergo Pummerer coupling with styrenes. Reaction of the resultant sulfonium salts with alkyllithium/magnesium reagents generates underexploited hypervalent sulfurane intermediates that undergo selective ligand coupling, resulting in dismantling of the benzothiophene motif and the formation of decorated (E,Z)‐1,3‐dienes.     

Mode transitions in distributed-feedback tapered master-oscillator power-amplifier: theory and experiments

Theoretical and experimental investigations have been carried out to study the spectral and spatial behavior of monolithically integrated distributed-feedback tapered master-oscillators power-amplifiers emitting around 973 nm. Introduction of self and cross heating effects and the analysis of longitudinal optical modes allows us to explain experimental results. The results show a good qualitative agreement between measured and calculated characteristics.     

40 GHz Mode-Locked Semiconductor Lasers: Theory, Simulations and Experiment

We study both theoretically and experimentally typical operation regimes of 40 GHz monolithic mode-locked lasers. The underlying Traveling Wave Equation model reveals quantitative agreement for characteristics of the fundamental mode-locking as pulse width and repetition frequency tuning, as well as qualitative agreement with the experiments for other dynamic regimes. Especially the appearance of stable harmonic mode-locking at 80 GHz has been predicted theoretically and confirmed by measurements. Furthermore, we derive and apply a simplified Delay-Differential-Equation model which guides us to a qualitative analysis of bifurcations responsible for the appearance and the breakup of different mode-locking regimes. Higher harmonics of mode-locking are predicted by this model as well.     

Versatile C(sp2)−C(sp3) Ligand Couplings of Sulfoxides for the Enantioselective Synthesis of Diarylalkanes

The reaction of chiral (hetero)aryl benzyl sulfoxides with Grignard reagents affords enantiomerically pure diarylalkanes in up to 98 % yield and greater than 99.5 % enantiomeric excess. This ligand coupling reaction is tolerant to multiple substitution patterns and provides access to diverse areas of chemical space in three operationally simple steps from commercially available reagents. This strategy provides orthogonal access to electron‐deficient heteroaromatic compounds, which are traditionally synthesized by transition metal catalyzed cross‐couplings, and circumvents common issues associated with proto‐demetalation and β‐hydride elimination.     

Selectiveness of laser processing due to energy coupling localization: case of thin film solar cell scribing

Selectiveness of the laser processing is the top-most important for applications of the processing technology in thin-film electronics, including photovoltaics. Coupling of laser energy in multilayered thin-film structures, depending on photo-physical properties of the layers and laser wavelength was investigated experimentally and theoretically. Energy coupling within thin films highly depends on the film structure. The finite element and two-temperature models were applied to simulate the energy and temperature distributions inside the stack of different layers of a thin-film solar cell during a picosecond laser irradiation. Reaction of the films to the laser irradiation was conditioned by optical properties of the layers at the wavelength of laser radiation. Simulation results are consistent with the experimental data achieved in laser scribing of copper-indium-gallium diselenide (CIGS) solar cells on a flexible polymer substrate using picosecond-pulsed lasers. Selection of the right laser wavelength (1064 nm or 1572 nm) enabled keeping the energy coupling in a well-defined volume at the interlayer interface. High absorption at inner interface of the layers triggered localized temperature increase. Transient stress caused by the rapid temperature rise facilitating peeling of the films rather than evaporation. Ultra-short pulses ensured high energy input rate into absorbing material permitting peeling of the layers with no influence on the remaining material.     

ps-laser scribing of CIGS films at different wavelengths

Continuous growth of the thin-film electronics market stimulates the development of versatile technologies for large-scale patterning of thin-film materials on rigid and flexible substrates, and laser technologies are a promising method to accomplish the scribing processes. Lasers with picosecond pulse duration were applied in scribing of complex multilayered CuIn _x Ga_(1−x)Se₂ (CIGS) solar cells deposited on a polyimide substrate. The ablative properties of the films were examined as a function of the wavelength of laser radiation, pulse energy, and the irradiation dose. The selective removal of ITO and CIGS layers was achieved with 355 nm irradiation without any significant damage to the underlying layers in the ITO/CIGS/Mo/PI solar cell system. The 355 nm wavelength was also found to be favorable for scribing of absorber layer in a ZnO/CIGS/Mo/PI solar cell system. 266 nm radiation significantly modified the film structure due to high absorption. Extensive melt formation in the CIGS layer was found when 532 nm radiation was applied, though the trenches were smooth and crack-free.