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本文研究了在不同磁场方向和温度下非原位Fe包套MgB2单芯带Jc的各向异性,通过对各种工艺条件下带材中MgB2芯的X-ray衍射图进行拟合分析和计算,比较了MgB2芯在Fe-MgB2界面和中心处的织构度和成份不均一性.研究发现带材Jc的各向异性受初始粉末颗粒尺寸的影响.由于受套管材料强度和形变加工工艺的影响,MgB2芯在Fe-MgB2界面处比在中心处有较强的织构.在MgB2-Fe的界面处,700℃淬火样品的X-ray衍射图中发现了由中间相Fe23B6生成的金属间化合物Fe2B.另外还研究了MgB4和MgO等主要杂质相的形成原因.  相似文献   
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The superconducting transition temperature has been investigated as a function of composition and degree of long-range order in a number of binary and ternary A 15-type phases on Cr and Mo. It is concluded that these compounds are unlike the typical Nb- or V- based phases with the same structure. The maximum Tc does usually not occur at the ideal composition. Nevertheless, a correlation has been found between Tc and the degree of order.  相似文献   
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A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.  相似文献   
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Experimental data on the superconducting transition temperature, and low temperature specific heat, together with X-ray investigations, are reported for binary and pseudo-binary compounds of Ti with the A 15-type structure. A “true” relative maximum of the coefficient of the electronic specific heat, γ, as well as the superconducting transition temperature, Tc, occurs in the Ti3Ir?xPtx system near x = 0.2. Ti3Ir0.8Pt0.2 shows the lowest Debye temperature, θ0 , of all A 15-type compounds known to date. The anomalous temperature dependence of the lattice specific heat may be reproduced by a model phonon spectrum similar to that of Nb3Sn.  相似文献   
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