首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   31篇
  免费   0篇
化学   5篇
数学   7篇
物理学   19篇
  2019年   1篇
  2013年   1篇
  2011年   3篇
  2010年   3篇
  2009年   1篇
  2008年   1篇
  2007年   4篇
  2006年   2篇
  2005年   2篇
  2003年   1篇
  2002年   1篇
  2000年   3篇
  1995年   1篇
  1993年   1篇
  1989年   1篇
  1988年   1篇
  1986年   2篇
  1981年   1篇
  1979年   1篇
排序方式: 共有31条查询结果,搜索用时 31 毫秒
1.
Time of flight secondary ion mass spectrometry 2D images and molecular depth profiles of human HeLa cells treated with bromodeoxyuridine (BrdU) were acquired in the dual beam mode (Bi(3) (+) analysis beam, C(60) (+) etching beam). Several preparation protocols were investigated and were compared to a simple wash-and-dry method. The feasibility of using C(60) to clean the samples prior to imaging with Bi was also investigated quantitatively by calibrating full depth profiles of the cells using atomic force microscopy. BrdU was used as a marker for the cell nucleus, facilitating identification and localization of sub-cellular features during depth profiling. Results show that C(60) can be used to remove the surface contamination and to access different layers within the cells for 2D imaging. For a 1 nA, 10 keV C(60) (+) beam incident at 45° and rastered over a 500 × 500 μm(2) area, ~1 nm of biological material was sputtered every second. Our results show that HeLa cells were completely removed after etching with 1.3×10(15) C(60) (+) ions per cm(2), giving an average etching rate of 3.9 nm for every 10(13) C(60) per cm(2) at 10 keV and 45° incidence.  相似文献   
2.
An element σ of An, the Alternating group of degree n, is extendible in Sn, the Symmetric group of degree n, if there exists a subgroup H of Sn but not An whose intersection with An is the cyclic group generated by σ. A simple number-theoretic criterion, in terms of the cycle-decomposition, for an element of An to be extendible in Sn is given here.  相似文献   
3.
New thermal conductivity experiments on the heavy-fermion superconductor CeCoIn5 down to 10 mK rule out the suggested existence of unpaired electrons. Moreover, they reveal strong multigap effects with a remarkably low "critical" field Hc2S for the small gap band, showing that the complexity of heavy-fermion band structure has a direct impact on their response under magnetic field.  相似文献   
4.
5.
Well-defined and homogeneous, contamination-free self-assembled monolayers (SAMs) were fabricated by the chemisorption of lip-NH-p-C6H4-NN-p-C6H4-COOH (lip = α-lipoyl) onto gold. This adsorbate species is composed of a 1,2-dithiolane-based headgroup, an azobenzene-based (and hence photochromic) spacer unit and a carboxylic acid functional group. The SAM constituents are covalently attached to the substrate by the bidentate thiolate anchor groups and exhibit a strongly tilted binding configuration.  相似文献   
6.
We study the dynamics of patterns exhibited by rule 52, a totalistic cellular automaton displaying intricate behaviors and wide regions of active/inactive synchronization patches. Systematic computer simulations involving 2(30) initial configurations reveal that all complexity in this automaton originates from random juxtaposition of a very small number of interfaces delimiting active/inactive patches. Such interfaces are studied with a sidewise spatial updating algorithm. This novel tool allows us to prove that the interfaces found empirically are the only interfaces possible for these periods, independently of the size of the automata. The spatial updating algorithm provides an alternative way to determine the dynamics of automata of arbitrary size, a way of taking into account the complexity of the connections in the lattice.  相似文献   
7.
In this work, we explored the possibility of performing molecular depth-profiling by using very low-energy (about 200 eV) monoatomic Cs(+) ions. We show, for the first time, that this simple approach is successful on polymer layers of polycarbonate (PC). Under 200 eV Cs(+) irradiation of PC, a fast decrease of all characteristic negatively charged molecular ion signals is first observed but, rather surprisingly, these signals reach a minimum before rising again. A steady state is reached at which time most specific PC fragments are detected, some with even higher signal intensity (e.g. C(6)H(5)O(-)) than before irradiation. It is believed that the implanted Cs plays a major role in enhancing the negative ionisation of molecular fragments, leading to their easy detection for all the profile, although some material degradation obviously occurs. In the positive ion mode, all molecular fragments of the polymer disappear very rapidly, but clusters combining two Cs atoms and one molecular fragment (e.g. Cs(2)C(6)H(5)O(+)) are detected during the profile, proving that some molecular identification remains possible. In conclusion, this work presents a simple approach to molecular depth-profiling, complementary to cluster ion beam sputtering.  相似文献   
8.
9.
In static secondary ion mass spectrometry (SIMS) experiments, an analysis dose of 10(12) ions/cm(2) typically produces optimum results. However, the same dose used in dual beam depth profiling can significantly degrade the signal. This is because during each analysis cycle a high-energy beam is rastered across the same x-y location on the sample. If a sufficient amount of sample is not removed during each sputter cycle, the subsequent analysis cycle will sample a volume degraded by the previous analysis cycles. The dimensionless parameter R' is used to relate the amount of damage accumulated in the sample to the amount of analysis beam dose used relative to the etching beam. Depth profiles from trehalose films spin-cast onto silicon wafers acquired using Bi(1) (+) and Bi(3) (+) analysis beams were compared. As R' increased, the depth profile and the depth resolution (interface width) both degraded. At R' values below 0.04 for both Bi(1) (+) and Bi(3) (+), the shape of the profile as well as the depth resolution (9 nm) indicated that dual beam analysis can be superior to C(60) single beam depth profiling.  相似文献   
10.
In the icosahedral phases i-AlCuFe, i-AlPdMn and i-AlPdRe, the electrical conductivity is in the same range as for doped semiconductors. Strong similarities are observed between the direct and tunneling conductivity for the i-AlPdRe phase and for disordered systems on both sides of the metal–insulator (MI) transition.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号