Comparative Studies Using EXAFS and PAC of Lattice Damage in Semiconductors

We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.     

IMP AC in-beam and out-of-beam;g-factors and pre-equilibrium effects following ion-implantation

An out-of-beam IMPAC technique has been developed to measure theg-factors of the 2 _l ⁺ states in the neutron-deficient Pt isotopes. The hyperfme field for Pt in Fe in those measurements was close to the field obtained in spin-echo and radioactivity measurements, in contrast with in-beam IMPAC measurements for^194,196,198Pt, where smaller field strengths were observed. These data, and static fields from in-beam IMPAC measurements for other ions in the Pt region, show a correlation with the lifetime of the probe state, consistent with the static field being absent for about 10 ps after the ion has come to rest. New and previously published IMPAC data for₇₆Os,₇₇Ir,₇₈Pt and₇₉Au in Fe hosts, are examined to assess whether such measurements may be sensitive to the thermal spike created at the end of the range of an implanted ion.