Er3+/Yb3+共掺杂纯氧化物材料上转换发光特性的研究

对实验制备的Er3 /Yb3 共掺杂3CaO-Al2O3-3SiO2样品在980激发下的上转换发光特性进行了研究, 检测到由处于激发态能级2H11/2, 4S3/2和4F9/2的Er3 离子分别向基态4I15/2跃迁时发出的波长依次为523, 547和656 nm的上转换发光. 做出了上转换发光强度与激发功率关系的曲线图, 并结合测得的声子能量对相应跃迁机制进行了分析, 发现上转换过程中Yb3 对的敏化作用起主要作用.     

Er3+单掺,Er3+/Yb3+共掺杂氟化物中红绿上转换荧光机理实验探索

制备了稀土离子Er^3＋单掺,Er^3＋-Yb^3＋共掺杂氟化物样品。在980nm波长激光激发下,室温时观察到了清晰可见的红（650nm）绿（545nm）上转换荧光,它们分别对应^4S3/2,^2H11/2-^4I15/2和^4F9／2-^4I15/2的发射。同时发现红绿上转换荧光的比值随Er^3＋的浓度增加而减少（对共掺而言）。上换荧光强度与激发光强度的关系表明红绿上转换荧光都是双光子上转换过程,在此基础上,根据能量匹配的原理,讨论了红绿上转换荧光的可能实现机制。     

Tuning electronic properties of the S_2/graphene heterojunction by strains from density functional theory

Based on the density functional calculations, the structural and electronic properties of the WS_2/graphene heterojunction under different strains are investigated. The calculated results show that unlike the free mono-layer WS_2, the monolayer WS_2 in the equilibrium WS_2/graphene heterojunctionis characterized by indirect band gap due to the weak van der Waals interaction. The height of the schottky barrier for the WS_2/graphene heterojunction is 0.13 eV, which is lower than the conventional metal/MoS_2 contact. Moreover, the band properties and height of schottky barrier for WS_2/graphene heterojunction can be tuned by strain. It is found that the height of the schottky barrier can be tuned to be near zero under an in-plane compressive strain, and the band gap of the WS_2 in the heterojunction is turned into a direct band gap from the indirect band gap with the increasing schottky barrier height under an in-plane tensile strain. Our calculation results may provide a potential guidance for designing and fabricating the WS_(2~-)based field effect transistors.     

Stability and optoelectronic property of low-dimensional organic tin bromide perovskites

The toxicity and degradation of hybrid lead-halide perovskites hinder their extensive applications.It is thus of great importance to explore non-toxic alternative materials with excellent stability and optoelectronic property.We investigate the atomic structures and optoelectronic properties of non-toxic organic tin bromide perovskites(OTBP)with one/zerodimensional(1D/0D)structures by first-principles calculations.The calculated atomic structures show that the 1D/0D OTBPs are stable and the structure of inorganic octahedra in 0D is higher order than that in 1D.Moreover,the origination of exceptional purity emitting light in experiments is explained based on the calculated electronic structure.