Simulation of Electronic Total-Reflection Effect in a Graphene Junction

We investigate theoretically the electron-reflection phenomenon in a graphene n＋n junction based on electron optics, where the local potential in the left n ＋ region is higher than that in the right n region. It is demonstrated numerically that electrons emitting from a point source in the n ＋ region will experience total internal reflection through the interface of the junction. The reflection becomes stronger and the transmission becomes weaker with decrease of the local potential in the right graphene ribbon. It is also found that when a nonideal interface is considered in the junction, the electron-reflection effect is enhanced due to interracial backseattering.