一种尼龙老化评价的新方法

作为一种广泛使用的工程塑料,尼龙的老化备受关注。当作为电力系统芯片的封装材料时,尼龙在自然环境下的老化有可能会导致封装失效,从而影响芯片使用的可靠性,严重时甚至导致芯片的失效,给电力行业带来巨大损失。常规的自然老化和人工加速老化评价周期非常漫长,不同因素对尼龙老化的影响机理十分复杂,且这种影响难以研究,使得评价尼龙的老化稳定性成为一大难题。采用自主开发的原位老化评价系统,对尼龙6（PA6）和尼龙66（PA66）的老化稳定性及湿度对老化的影响进行了研究。该系统可以实现光照/温度/湿度/氧气等环境因素的加载,通过高灵敏度地测定材料在综合环境因素作用下产生的气相降解产物来评价材料的老化稳定性,评价时间缩短到几小时。实验表明,PA6和PA66的气相降解产物以H₂O和CO₂为主,由于H₂O在气相中的浓度不稳定,因此以CO₂的产生量作为老化评价指标。通过对不同自然老化时间PA6和PA66的原位老化评价,并与其ATR-FTIR红外光谱图进行对照,证明了原位老化评价方法能够较好地反映尼龙的老化程度,自然老化时间越长,PA6和PA66的稳定性越低,CO₂的产生量越大。进一步,采用该方法研究了湿度对PA6和PA66老化反应的影响,证明增大湿度对尼龙老化存在促进作用,而且升高温度会进一步促进湿度对老化的促进作用。研究表明,原位老化评价方法是一种快速评价尼龙老化稳定性及环境因素影响的有力手段。     

Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors (HEMTs) are experimentally investigated. It is observed that the reverse leakage current between the gate and source decreases after the off-state stress, whereas the current between the gate and drain increases. By analyzing those changes of the reverse currents based on the Frenkel-Poole model, we realize that the ionization of fluorine ions occurs during the off-state stress. Furthermore, threshold voltage degradation is also observed after the off-state stress, but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are different. By comparing the differences between those devices, we find that the F-ions incorporated in the GaN buffer layer play an important role in averting degradation. Lastly, suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.     

用单块激光器和环形外腔获得稳定的532 nm激光

采用单块半非平面Nd:YAG单频环形激光器和环形外腔倍频技术，获得了单频功率249.5mW的532nm波长的绿光输出，倍频效率43.2%，实现了倍频腔与激光器之间的跟踪锁定，倍频光功率稳定性优于1％，理论计算与实验结果一致。