Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation.Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorusdoped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.     

Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K.