Measurement of the Carrier Recovery Time in Semiconductor Optical Amplifier Based on Dual-Pump Four-Wave Mixing Technology

A scheme of measuring the carrier recovery time in semiconductor optical amplifiers （SOAs） based on dual pump Four-wave mixing technology is presented. The carrier recovery times under 120mA, 180mA 240mA and 300mA injected currents are measured to be 111ps, 81ps, 71ps and 53ps, respectively. The carrier recovery time of the spacing between the two umps is also investigated. The experimental results show that the conversion efficiency keeps constant when the spacing of the two pumps varies within a small range.     

增益钳制半导体光放大器的静态特性分析

采用增益钳制半导体光放大器的时域模型,用MATLAB计算其静态特性,着重分析了放大器的输入信号光与增益的相关性.结果表明,在注入电流一定的情况下,输入信号光与放大器的增益呈相反方向变化,但是增益带宽积不变.     

Measurement of the carrier recovery time in SOA based on four-wave mixing on narrow-band ASE spectrum

Carrier recovery time is a key parameter that determines the performance of a semiconductor optical amplifier (SOA). A measurement method of carrier recovery time in SOA based on a nearly degenerate four-wave mixing of narrow-band amplified spontaneous emission (ASE) spectra is presented. The results show the carrier times are 50.2, 44.6, and 23.6 ps when the injected currents are 120, 180, and 240 mA, respectively, which are in agreement with the nominal values of the sample.