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采用Langmuir探针方法对氢等离子体中电子密度和电子能量概率函数随射频功率的变化进行研究,发现电子密度在射频功率增加过程中出现两次跳跃。通过发射光谱法测得氢等离子体Hα、Hβ和Hγ三条谱线强度比值的变化,进一步验证了密度跳跃现象。该现象说明氢等离子体的放电模式发生了从电感耦合到电容耦合再到螺旋波模式的转变。从电子与氢分子的相互作用和Nagoya type Ⅲ型(N-型)天线电场耦合作用两方面解释密度跳跃现象。随着输入功率的增加,电子与氢分子相互作用增强,使电子密度发生跃变;当天线横向电场Ey取最大值,螺旋波轴向波矢kz分别为π/la和3π/la时天线与等离子体耦合最好,分别产生两次密度跳跃。     

Morphological effect on electrochemical performance of nanostructural CrN

Size and morphology are critical factors in determining the electrochemical performance of the supercapacitor materials, due to the manifestation of the nanosize effect. Herein, different nanostructures of the CrN material are prepared by the combination of a thermal-nitridation process and a template technique. High-temperature nitridation could not only transform the hexagonal Cr₂O₃ into cubic CrN, but also keep the template morphology barely unchanged. The obtained CrN nanostructures, including (i) hierarchical microspheres assembled by nanoparticles, (ii) microlayers, and (iii) nanoparticles, are studied for the electrochemical supercapacitor. The CrN microspheres show the best specific capacitance (213.2 F/g), cyclic stability (capacitance retention rate of 96% after 5000 cycles in 1-mol/L KOH solution), high energy density (28.9 Wh/kg), and power density (443.4 W/kg), comparing with the other two nanostructures. Based on the impedance spectroscopy and nitrogen adsorption analysis, it is revealed that the enhancement arised mainly from a high-conductance and specific surface area of CrN microspheres. This work presents a general strategy of fabricating controllable CrN nanostructures to achieve the enhanced supercapacitor performance.     

Manipulating metal-insulator transitions of VO2 films via embedding Ag nanonet arrays

Manipulating metal-insulator transitions in strongly correlated materials is of great importance in condensed matter physics, with implications for both fundamental science and technology. Vanadium dioxide (VO₂), as an ideal model system, is metallic at high temperatures and shown a typical metal-insulator structural phase transition at 341 K from rutile structure to monoclinic structure. This behavior has been absorbed tons of attention for years. However, how to control this phase transition is still challenging and little studied. Here we demonstrated that to control the Ag nanonet arrays (NAs) in monoclinic VO₂(M) could be effective to adjust this metal-insulator transition. With the increase of Ag NAs volume fraction by reducing the template spheres size, the transition temperature (T_c) decreased from 68° to 51°. The mechanism of T_c decrease was revealed as:the carrier density increases through the increase of Ag NAs volume fraction, and more free electrons injected into the VO₂ films induced greater absorption energy at the internal nanometal-semiconductor junction. These results supply a new strategy to control the metal-insulator transitions in VO₂, which must be instructive for the other strongly correlated materials and important for applications.     

FeNiMo/SiO2复合粉芯的制备与软磁性能调控

目前金属软磁粉芯材料在高频电感等电子元件的应用前景广阔,然而其主要的构成元素属于过渡金属,表面易形成致密的氧化层,影响其软磁性能的调控.为了解决这些问题,本文引入H₂/Ar混合气体高温预处理工艺对FeNiMo原粉进行还原,证实了还原性气氛高温处理可以有效地去除材料表面的金属氧化物,增加金属单质的含量,进而显著提升FeNiMo原粉的有效磁导率.对预处理后的FeNiMo粉末进行SiO₂绝缘包覆,所获得的FeNiMo/SiO₂软磁复合材料表面包覆均匀;与未处理FeNiMo原粉包覆SiO₂所形成的软磁复合粉芯相比, H₂/Ar混合气体高温预处理后的FeNiMo/SiO₂具有更高的有效磁导率、更低的损耗.与同类其他软磁复合粉芯相比,通过H₂/Ar混合气体高温预处理工艺和绝缘包覆工艺的协同效应,所制备的FeNiMo/SiO₂复合粉芯具有优异的软磁性能.因此经过还原性气氛高温预处理工艺后的绝缘包覆可以更大程度地提升软磁粉芯复合...     

First-principles study of structural,electronic and optical properties of ZnF_2

The structural, electronic, and optical properties of rutile-, CaC12-, and PdF2-ZnF2 are calculated by the plane-wave pseudopotential method within the density functional theory. The calculated equilibrium lattice constants are in reasonable agreement with the available experimental and other calculated results. The band structures show that the rutile-, CaCl2-, and PdF2-ZnF2 are all direct band insulator. The band gaps are 3.63, 3.62, and 3.36 eV, respectively. The contribution of the different bands was analyzed by the density of states. The Mulliken population analysis is performed. A mixture of covalent and weak ionic chemical bonding exists in ZnF2. Furthermore, in order to understand the optical properties of ZnF2, the dielectric function, absorption coefficient, refractive index, electronic energy loss spectroscopy, and optical reflectivity are also performed in the energy range from 0 to 30 eV. It is found that the main absorption parts locate in the UV region for ZnF2. This is the first quantitative theoretical prediction of the electronic and optical properties of ZnF2 compound, and it still awaits experimental confirmation.     

纳米FePt颗粒:MgO多层复合薄膜的外延生长、微观结构与磁性研究

采用脉冲激光沉积法,在MgO(100)面上外延生长了FePt:MgO多层纳米复合薄膜,FePt成分为Fe48Pt52.FePt纳米颗粒周期性嵌埋于单晶MgO外延层中.原位反射式高能电子衍射分析结果表明,MgO外延层呈层状生长,而FePt纳米颗粒呈岛状生长.在整个FePt:MgO纳米复合薄膜的生长过程中,成功实现了层状-岛状生长模式的交替控制.高分辨透射电子显微镜分析结果表明,退火热处理后,结晶完整的L10-FePt纳米颗粒粒径约为5 nm,呈扁平六角形状,在MgO基底上形成逐层排列的纳米点阵.磁滞回线结果表明,退火后薄膜矫顽力增大,有序度提高,磁性增强.