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由于有机发光二极管(OLED)中存在金属阴极和有机层界面,故部分光子会转化为表面等离子激元沿金属表面传播耗散掉。同时,金属阴极自身也会吸收部分光能量。这两种情况均会导致器件出光率降低。分析了在结构为Ag (100 nm)/MoO3(5 nm)/NPB (35 nm)/EML (20 nm)/Alq3(40 nm)/Al (20 nm)/MoO3(50 nm)的器件内部引入银纳米颗粒(Ag NPs)或者金纳米颗粒(Au NPs)后器件出光效率的变化。同时,改变金属纳米颗粒的位置以观察其对出光效率的影响。利用有限差分时域法对无金属纳米颗粒的器件和金属纳米颗粒位于器件不同位置时的出光效率进行了模拟计算。结果显示,Ag NPs或者Au NPs都可以提高器件出光效率且Ag NPs优于Au NPs。在468 nm波长下,Ag NPs位于Al阴极表面、电子传输层(ETL)中间和Ag表面时器件的透光率分别是51.1%,50.5%和45.5%,而未掺杂Ag NPs的参考器件的透光率仅为43.3%。 相似文献
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The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits 下载免费PDF全文
A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships (VCRs) between two parallel memristive circuits - a parallel memristor and capacitor circuit (the parallel MC circuit), and a parallel memristor and inductor circuit (the parallel ML circuit) - are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. An equivalent circuit model of the memristor is built, upon which the circuit simulations and exper/mental measurements of both the parallel MC circuit and the parallel ML circuit are performed, and the results verify the theoretical analysis results. 相似文献
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