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Two-dimensional(2D) van der Waals semiconductors are appealing for low-power transistors. Here, we show the feasibility in enhancing carrier mobility in 2D semiconductors through engineering the vertical distribution of carriers confined inside ultrathin channels via symmetrizing gate configuration or increasing channel thickness.Through self-consistently solving the Schr¨odinger–Poisson equations, the shapes of electron envelope functions are extensively investigated by clarifying their relatio... 相似文献
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