铁冷轧形变以及热处理对形变缺陷的影响

采用常用冷轧设备对铁进行冷轧引入形变缺陷。研究形变量和温度对形变缺陷的影响。形变样品中的微观缺陷、物相结构和形貌分别使用正电子湮没技术（PAT）、X射线衍射仪（XRD）和透射电子显微镜（TEM）进行表征分析。对经过673 K热处理的形变样品前后进行XRD测试,结果显示,随着形变量的增加,样品中晶面方向（200）具有择优生长趋势,673 K热处理后,择优趋势更加明显,同时晶粒的尺寸也增大。利用正电子湮没寿命谱和多普勒展宽能谱对样品中形变缺陷的热力学稳定性进行研究,发现形变引入的空位型缺陷约在673 K回复完毕,723 K后位错缺陷开始回复。The pure iron was cold rolled with the thickness reduction from 0% to 75%. The microstructure defects, crystallographic structure and morphology of deformed specimens were characterized by positron annihilation technique (PAT), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD results show that the intensity of (200) increased with increasing deformation, 673 K heat-treatment promote the preference of (200) and the grain size of (200) was increased. The PAT results show that the vacancy type defect was annihilated at 673 K and the dislocation type defects start to annihilate at 723 K.     

硫化温度对ZnS薄膜生长质量的影响

采用热反应法对玻璃衬底上以磁控溅射制备的Zn薄膜进行硫化,制备出ZnS薄膜。薄膜的微观结构、物相结构和表面形貌分别采用正电子湮没技术（PAT）、X射线衍射仪（XRD）、扫描电子显微镜（SEM）进行分析和表征。利用慢正电子湮没多普勒展宽对四个不同硫化温度下得到的ZnS薄膜样品中膜层结构缺陷进行研究,测量了薄膜中的空位型微观缺陷的相对浓度,指出445℃硫化样品中正电子注入能量在1.5~4.5 keV后S参数最小,说明该硫化温度下反应生成的ZnS薄膜结构缺陷浓度最小,膜的致密度最高。XRD结果显示薄膜在445℃以上硫化后,呈（111）择优生长趋势。从扫描电镜的结果也可以看出,在445℃硫化后,薄膜的晶粒明显地变得更大、更致密,这是因为ZnS晶胞比Zn晶胞大以及硫化过程中ZnS固相再结晶的缘故。ZnS thin films have been prepared by sulfurizing zinc thin films deposited on glass substrate by magnetron sputtering for two hours. The microstructure defects, crystallizations and surface morphology of zinc films sulfurized at different temperature were analyzed by PAT (positron annihilation technique), XRD(X-ray diffraction) and SEM (Scanning electron microscopy), respectively. For analyzing the structure defect of four samples with different sulfurization temperature, PAT has been used to obtain the relative concentration of defects. With the positron energy range of 1.5~4.5 keV, the S parameter of ZnS films is minimum. It demonstrates that ZnS films produced at 445℃ have the minimum structural defect concentration and the highest density. XRD results show that films are blende structure with the preference of (111) orientation above 445℃. And from the result of SEM, because of ZnS films recrystallization, the crystal grains obviously become large and dense at 445℃.