Tuning Thermal Conductivity in Si Nanowires with Patterned Structures

Tuning the thermal conductivity of silicon nanowires(Si-NWs)is essential for realization of future thermoelectric devices.The corresponding management of thermal transport is strongly related to the scattering of phonons,which are the primary heat carriers in Si-NWs.Using the molecular dynamics method,we find that the scattering of phonons from internal body defects is stronger than that from surface structures in the low-porosity range.Based on our simulations,we propose the concept of an exponential decay in thermal conductivity with porosity,specifically in the low-porosity range.In contrast,the thermal conductivity of Si-NWs with a higher porosity approaches the amorphous limit,and is insensitive to specific phonon scattering processes.Our findings contribute to a better understanding of the tuning of thermal conductivity in Si-NWs by means of patterned nanostructures,and may provide valuable insights into the optimal design of one-dimensional thermoelectric materials.