高功率台式激光器原理及应用

简介了台式激光器的发展与CPA技术,分析了高功率台式激光器的性能和价值,并对未来的应用作了展望．     

Magnetization of two-dimensional heavy holes with boundaries in a perpendicular magnetic field

The magnetisation of heavy holes in III--V semiconductor quantum wells with Rashba spin-orbit coupling (SOC) in an external perpendicular magnetic field is studied theoretically. We concentrate on the effects on the magnetisation induced by the system boundary, the Rashba SOC and the temperature. It is found that the sawtooth-like de Haas--van Alphen (dHvA) oscillations of the magnetisation will change dramatically in the presence of such three factors. Especially, the effects of the edge states and Rashba SOC on the magnetisation are more evident when the magnetic field is smaller. The oscillation center will shift when the boundary effect is considered and the Rashba SOC will bring beating patterns to the dHvA oscillations. These effects on the dHvA oscillations are preferably observed at low temperatures. With increasing temperature, the dHvA oscillations turn to be blurred and eventually disappear.     

一类具有潜伏周期的空间异质反应扩散梅毒模型动力学分析

该文研究了一类具有潜伏周期的异质空间扩散的梅毒模型的阈值动力学行为.首先讨论了系统解的全局存在性以及系统全局吸引子的存在性.其次,根据传染病模型下一代再生算子定义推导出模型的动力学阈值-基本再生数R₀.具体地,当R₀ <1,无病平衡态是全局吸引的;根据耗散系统的持久性理论证明了当R₀> 1时疾病是一致持久的.最后,在空间同质情形下,推导出模型基本再生数R₀的显示表达式.此外,除了证明无病平衡点的全局稳定之外,还利用波动引理证明了系统正平衡点的全局稳定性.     

Orbital magnetization in semiconductors

This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin--orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin--orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10^-2--10^-1 effective Bohr magneton and 10^-1--1 e²/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.