Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.     

Mid-infrared generation based on a periodically poled LiNbO3 optical parametric oscillator

We report a nanosecond Nd:YVO_4-pumped optical parametric oscillator (OPO) based on periodically poled LiNbO_3 (PPLN). Tuning is achieved in this experiment by varying the temperature and period of the PPLN. The design of double-pass singly resonant oscillator (DSRO) and confocal cavity enables the OPO threshold to be lowered considerably, resulting in a simple, compact, all-solid-state configuration with the mid-infrared idler powers of up to 466mW at 3.41μm.     

Nd：YVO4晶体α向生长研究

采用固-液两相混合，使Nd2o3、Y2O3和V2O5在近常温条件下初步合成Nd：YVO4多晶原料，降低固相合成反应温度，减少V2O5在多晶原料制备过程中的挥发。讨论了α方向V单晶生长条件，采用提拉法，以(100)方向进行单晶生长，得到一系列掺杂浓度的Nd：YVO4单晶。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

扰动方法在胎次递进人口系统中的应用

本文中应用线性算子扰动理论研究了胎次递进人口算子在递进比的小扰动下对主本征值及相应本征元的影响，给出了主本征值及相应本征元的修正值主项所满足的公式．     

Cr3+在SrTiO3晶体中的晶场能级

由激发光谱及荧光光谱的测量,运用Tanabe-Sugano能量矩阵计算了Cr3+在SrTiO3晶体中的晶场能级.     

掺铬钛酸锶晶体的氧化还原诱导吸收及发光的退火效应和浓度效应

制备了纯的、掺0.005、0.01、0.2和0.5wt%Cr2O3的钛酸锶单晶.测量了不同退火条件下的室温透射光谱及6.5K以上的荧光光谱.对晶体的氧化和还原热处理诱导吸收及退火和掺杂浓度对晶体发光的影响进行了较为详细的研究.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

第四代像增强器

美国在红外夜视和微光夜视技术方面一直在世界上居领先地位,并不断取得新的进展.2000年美国陆军已开始装备横向技术集成型前视红外传感器,2001年装备了第四代微光夜视眼镜.……     

公务员最优录用分配方案的数学模型

本文通过建立0-1规划模型,设计了一种公务员招聘中的最优录用分配方案,并运用L INGO软件求得了一个实际问题的最优解.