Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tanθ and f is higher than that with a higher production of tanθ and f.     

Three-dimensional photonic crystals containing designed defects achieved with two-photon photopolymerization

Two-photon photopolymerization （TPP） with femtosecond laser is a promising method to fabricate threedimensional （3D） photonic crystals （PCs）. Based on the TPP principle, the micro-fabrication system has been built. The 3D woodpile PCs with rod space of 2000 nm are fabricated easily and different defects are introduced in order to form the cross-waveguide and the micro-laser structure PCs. Simulation results of the optical field intensity distributions using finite-difference time domain （FDTD） method are given, which support the designs and implementation of the PC of two types in theory.     

Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates(PSSes) with different values of fill factor(f) and slanted angle(θ) are investigated in detail.The threading dislocation(TD) density is lower in the film grown on the PSS with a smaller fill factor,resulting in a higher internal quantum efficiency(IQE).Also the ability of the LED to withstand the electrostatic discharge(ESD) increases as the fill factor decreases.The illumination output power of the LED is affected by both θ and f.It is found that the illumination output power of the LED grown on the PSS with a lower production of tan θ and f is higher than that with a higher production of tan θ and f.