X射线分析氢化物汽相外延法生长GaN薄膜

氮化物研究在90年代取得显著进步,成功制造出蓝色发光二极管和激光二极管.由于氮化镓与衬底(如:蓝宝石,碳花硅)间存在大的晶格常数和热膨胀系数失配,外延膜中有非常高的位错密度.研究氢化物汽相外延法生长的氮化镓膜中倾斜和扭转现象,并应用到以X射线摇摆曲线的半峰宽计算氮化镓膜中位错密度.Ф扫描曲线表征外延的氮化镓晶体六方对称性,而极图表明氮化镓膜中存在马赛克结构.计算出螺位错密度为:2.93×109cm-2和刃位错密度为:5.25×1010cm-2.     

具有可渗透阳极的自呼吸微流体燃料电池性能特性

微流体燃料电池去除了质子交换膜,避免了膜退化、水管理等问题,是微型燃料电池领域新的研究热点。本文构建了具有可渗透阳极和空气自呼吸阴极的微流体燃料电池,采用甲酸溶液作为燃料对其性能特性进行了实验研究。结果表明:具有可渗透阳极的自呼吸微流体燃料电池性能随燃料浓度或流量的增加先升高后下降,随电解液浓度的增加而升高;阳极侧反应产生的CO₂气泡对自呼吸微流体燃料电池的性能和燃料利用率的影响较大,适当提高燃料流量有利于气泡的排除。     

Growth and Optical Properties of Double Heterostructure GaN／InGaN／GaN Films with Large Composition

The double heterostructure GaN/InGaN/GaN films with different thicknesses of the InGaN layer were grown at 780℃ or 800℃ by metal-organic chemical vapour deposition.The samples were investigated using x-ray diffraction (XRD),room-temperature photoluminescence (PL) and Raman scattering.The dependences of the samples on both the growth temperature and the thickness of the InGaN layer were studied.The composition of InGaN was determined by the results of XRD,and the bowing parameter of InGaN was calculated in terms of the PL spectra.When the thickness of the InGaN layer was reduced,the phase separation of InGaN was found in some samples.The raman frequency of the A1(LO) and E2(low) modes in all the samples shifted and did not agree with Vegard‘s law.