Large-Area Freestanding Weyl Semimetal WTe_2 Membranes

We report a universal transfer methodology for producing artificial heterostructures of large-area freestanding single-crystalline WTe₂ membranes on diverse target substrates.The transferred WTe₂ membranes exhibit a nondestructive structure with a carrier mobility comparable to that of as-grown films(～179–1055 cm²·V^?1·s^?1).Furthermore,the transferred membranes show distinct Shubnikov–de Haas quantum oscillations as well as weak localization/weak anti-localization.These results provide a new approach to the development of atom manufacturing and devices based on atomic-level,large-area topological quantum films.     

忆阻器单阻态下的记忆电容行为及多态特性

采用供体-受体类型的共聚物构建了Al/共聚物/ITO结构的有机记忆器件,并对其电流-电压(I-V)和电容-电压(C-V)特性进行了研究.结果表明:器件不仅表现出明显的记忆电阻特征,而且在单个电阻状态下还存在记忆电容行为,使器件呈现出两种电阻状态和与之对应的四种电容状态,具有电阻和电容的双参量记忆能力.在此基础上对器件的电容开关行为进行了电压幅值的调制,使器件出现了更多的电容状态,为多级存储的实现提供了一条有效途径.最后通过引入分子内部极化算符,建立了记忆电阻和记忆电容的关联性,给出了描述器件双参量多状态特征的矩阵模型.