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We report herein a high-power folded intra-cavity 2.1μm optical parametric oscillator(ICOPO)which is the first example of an ICOPO that utilizes a wavelength-locked 878.6 nm in-band pumped Nd:YVO_4 laser as the pump source.The thermal effect of PPMgLN crystal and the divergence angle of the incident laser are considered comprehensively to determine the 2128 nm degenerate temperature.In the experiment,the functions of different output coupler transmittances and different repetition rates on the parametric laser output power are studied,respectively.The temperature versus parametric laser output power in an in-band p umped non-wavelength-locked880 nm laser diode(LD)and in a wavelength-locked 878.6 nm LD is compared.A maximum output power of 5.87 W is obtained at the pump power of 56.9 W when the repetition rate is 80 kHz.The corresponding conversion efficiency is 14.55%,with a linewidth of 73.65 nm and pulse width of 3.62 ns.The wavelength-locked 878.6 nm LD in-band pumping technology can stabilize the 2.1μm laser output power of Nd:YVO_4 crystal effectively in the environment of intense temperature change.  相似文献   
2.
The third-order susceptibility of InxGa1-xN/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass Schrodinger equation is solved numerically. It is shown that the third-order susceptibility for third harmonic generation (THG) of InxGa1-xN/GaN QW is related to indium content in QW and the intensity of the PZ field. Thecharacteristics of xTHG(3) (-3ω, ω, ω,ω ) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.  相似文献   
3.
为改善中红外光参量振荡器(OPO)激光输出光束质量,设计了一种90°像旋转四镜非平面环形腔型结构.通过建立单位球等效计算方法,对此种特殊腔型结构存在的像旋转角进行计算,并由此确定了适用于中红外OPO运行的90°像旋转谐振腔结构相关参数.在此基础上进一步建立了非对称轴环形腔中光场模式自再现模型,分析得出随着像旋转角由0°向90°变化,谐振腔内光场模式逐渐均匀化,当旋转角为90°时,基模以及高阶模都表现出非常好的中心对称性.基于此采用中红外ZnGeP_2 OPO对所设计的腔型参数进行实验测量,实现了光束质量M_X~2=1.81和M_Y~2=1.61.由此可以证明所设计的90°像旋转四镜非平面环形腔对中红外OPO激光系统的输出光束质量的优化有显著效果.  相似文献   
4.
The third-order susceptibility of InxGa1-xN/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass SchrSdinger equation is solved numerically. It is shovn that the third-order susceptibility for third harmonic generation (THG)of InxGa1-x,N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics ofX(3)THG(-3ω,(3) ω, ω,ω) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.  相似文献   
5.
A stable wavelength operation Ho:YAG laser dual-pumped by two orthogonally polarized Tm:YLF lasers is reported. Under the cw operation mode, a laser output power of 24 W is measured. The corresponding opticaloptical conversion efficiency is 44.75% and the slope efficiency is 50.12%. Under the Q-switched operation mode,the output maximum average power is 22.8 W at the re-frequency of 6 kHz. The corresponding optical-optical conversion efficiency and slope efficiency are 42.64% and 48.01%, respectively. The output central wavelength is 2090.73 nm, the linewidth is 0.40 nm, and the beam quality is M~2 1.6. Moreover, the shift of the output central wavelength is less than 0.01 nm, and the linewidth shift is also less than 0.01 nm.  相似文献   
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