Absorption and propagation of light in quaterthiophene crystals

We examine absorption of light in quaterthiophene crystals for different directions of the ray and wave-normal vector after refraction on the vacuum/crystal interface. Experimental non-normal incidence spectra are reported where different absorption bands show different behaviour as a function of the angle of incidence. This allows to identify those originating from the b_u Frenkel exciton state.     

XRR and GISAXS study of silicon oxynitride films

Thin films of silicon oxynitride have largely replaced pure silicon oxide films as gate and tunnel oxide films in modern technology due to their superior properties in terms of efficiency as boron barrier, resistance to electrical stress and high dielectric strength. A single chamber system for plasma enhanced chemical vapor deposition was employed to deposit different films of SiO_xN_yH_z with 0.85 < x < 1.91. All films were previously characterized by Rutherford back-scattering and infrared spectroscopy to determine the stoichiometry and the presence of various bonding configurations of constituent atoms. We used X-ray reflectivity to determine the electron density profile across the depth, and we showed that the top layer is densified. Moreover, grazing incidence small-angle X-ray scattering was used to study inhomogeneities (clustering) in the films, and it is shown that plate-like inhomogeneities exist in the top and sphere-like particles at the bottom part of the film. Their shape and size depend on the stoichiometry of the films.     

The coarse moduli space of a flat analytic groupoid

Annali di Matematica Pura ed Applicata (1923 -) - Let $$\mathcal X $$ be a flat analytic groupoid $$R_X\stackrel{s}{\underset{t}{\rightrightarrows }}X$$ such that the holomorphic map...     

Macroscopic evidence of soliton formation in multiterawatt laser-plasma interaction

A novel physical phenomenon has been observed following the interaction of an intense (10(19) W/cm(2)) laser pulse with an underdense plasma. Long-lived, macroscopic bubblelike structures have been detected through the deflection that the associated electric charge separation causes in a proton probe beam. These structures are interpreted as the remnants of a cloud of relativistic solitons generated in the plasma by the ultraintense laser pulse. This interpretation is supported by an analytical study of the soliton cloud evolution, by particle-in-cell simulations, and by a reconstruction of the proton-beam deflection.     

Phenol transformation photosensitised by quinoid compounds

The phototransformation of phenol in aqueous solution was studied with different quinoid compounds, which are usually detected on atmospheric particulate matter: 2-ethylanthraquinone (EtAQ), benzanthracene-7,12-dione (BAD), 5,12-naphthacenequinone (NQ), 9,10-anthraquinone (AQ), and 2,6-dihydroxyanthraquinone (DAQ). All the studied quinones were able to sensitise the phototransformation of phenol. Under blue-light irradiation the approximated, polychromatic quantum yields for phenol photodegradation were in the order AQ > BAD > EtAQ > NQ > DAQ. Quantum mechanical calculations showed that AQ and DAQ have a very different spin distribution in the triplet state (largely located on the carbonyl oxygen and delocalised over the aromatic ring, respectively) that could account for the difference in reactivity. The spin distribution of EtAQ is similar to that of AQ. Under simulated sunlight, EtAQ induced the highest rate of phenol degradation. Radiation-excited EtAQ would oxidise both ground-state EtAQ and phenol; a kinetic model that excludes the ˙OH radical and singlet oxygen as reactive species is supported by the experimental data. Quinones were also able to oxidise nitrite to nitrogen dioxide, thereby inducing phenol nitration. Such a process is a potential source of nitrogen dioxide and nitrophenols in the atmospheric aerosols.     

Infra-red properties of bulk heavily doped silicon

Summary In this work reflectance (R) and thermoreflectance (TR) spectra in the infra-red of bulk P and B heavily doped silicon samples are reported and discussed. The values of the scattering time and of the effective mass, as well as the temperature derivative of the plasma frequency, scattering time and high-frequency dielectric constant are extracted from the data and analysed in terms of free-carrier-photon and free-carrier-impurity interaction.

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Riassunto In questo lavoro sono riportati e discussi gli spettri di riflettanza (R) e termoriflettanza (TR) in infrarosso di campioni di silicio drogati pesantemente per diffusione con P e B. Dai dati sono ricavati i valori dei tempi di rilassamento e della massa effettiva, come pure la derivata in temperatura della frequenza di plasma, del tempo di rilassamento e della costante dielettrica ad alta frequenza, che sono analizzati sulla base delle interazioni fra portatori liberi e fononi e fra portatori liberi e impurezze.