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We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure(named as MONOS), utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at +11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s' retention. In addition, the leakage current density is lower than 2.52 × 10~(-7) A·cm~(-2) below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.  相似文献   
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本文研究边界条件中带有扰动参数的积分边值问题正解的存在性与不存在性及扰动参数对正解存在性的影响.利用不动点指数理论,得出边值问题至少有一个正解、两个正解以及无解的充分条件.  相似文献   
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A novel nitro-coordinated potassium compound [K(Htdc)(H_2O)]_n(tdc = 3-nitro-thiophene-2,5-dicarboxylate), has been synthesized and characterized. The complex with a two-dimensional(2D) layer structure contains an infinite K-O ladder-shaped chain, which is connected through carboxyl and unusual nitro-coordination of Htdc– anion. Then the 2D layers are further extended by intermolecular hydrogen-bonding to form a three-dimensional(3D) supramoleculalr network. Variable temperature powder X-ray diffractions, thermogravimetric analysis and nuclear magnetic resonance studies exhibit that the compound has a thermal-induced decarboxylative behavior.  相似文献   
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