水载流-原子荧光光谱法同时测定土壤中痕量砷、汞

改变原子荧光光谱法以稀酸为载流的进样方式,以水为载流在新型双道原子荧光光谱仪上同时测定了土壤中的痕量砷(As)、汞(Hg)。采用王水水浴加热溶解样品,用50 g/L硫脲-抗坏血酸混合溶液预先将砷还原为As(Ⅲ),保持10%(体积分数)以上盐酸浓度,不转移直接定容静置后测定。优化了仪器工作条件,详细考察了以水为载流测定的可行性,选择了同时测定As、Hg所需的硼氢化钾浓度和盐酸浓度。节省了酸试剂用量,操作快速,单个样品测定仅需20 s左右。方法检出限As为0.005 mg/kg,Hg为0.0008 mg/kg,相对标准偏差(RSD,n=7)在1.0%~7.4%,经土壤国家标准物质和实际样品验证,适合土壤中痕量As、Hg的同时快速测定。     

Controllable synthesis,characterization,and growth mechanism of hollow Zn_x Cd_(1-x) S spheres generated by a one-step thermal evaporation method

Novel hollow ZnxCdl xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction （XRD） study, the hexagonal wurtzite phase of ZnxCdl_xS is verified, and the Zn mole fraction （x） is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core- shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method

A singie cell element of chalcogenide random access memory was fabricated by using the focused ion beam method.The contact size between the Ge2Sb2Te5 Phase change film and the top electrode film is about 600nm (diameter) and the contact area is caiculated to be 0.28μm^2.The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory.The minimum threshold current of about 0.6mA is obtained.     

中国陆相油气的形成和运移(Ⅱ)

本文(Ⅰ)着重研究了中国陆相湖盆沉积物中有机质向油气演化的过程.本文(Ⅱ)阐明了现代青海湖沉积物埋藏初期及早期成岩作用过程中有机质的演化特征.其结果表明陆相有机质大量开始向石油转化的深度随不同地区、不同时代、不同类型的有机质而异.最后,运用特征有机化合物、稀有气体同位素等资料,结合构造发展史阐述我国陆相油气运移的类型、规模和途径.指出近油源短距离是陆相油气运移的基本特征.     

硼玻璃中Dy3+及Sm3+的辐射跃迁几率和无辐射跃迁几率

硼玻璃中掺杂Nd3+,Er3+,Tm3+等小能隙的稀土离子,由于硼玻璃声子能量大,多声子无辐射几率大,影响其发光效率。但由于硼玻璃熔点低,加工容易,对于民用上常用的Sm3+,Dy3+,Eu3+,Tb3+等大能隙物质,多声子无辐射跃迁不是主要因素的情况下,发光效率将如何是本文要研究的问题。另外,辐射跃迁性质的研究对于能量传递机理的研究也是很有意义的。     

硼玻璃中Sm3+离子的衰减及交叉弛豫

本文从Sm3+的衰减特性及能级跃迁性质两个方面研究Sm3+离子间的相互作用.一方面研究不同浓度Sm3+的衰减性质,利用Hirayama的理论确立相互作用的性质,另一方面研究相关能级的跃迁性质,从而证实由衰减所得结论的合理性.     

Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory

Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.     

Simulation of Phase-Change Random Access Memory with Ring-Type Contactor for Low Reset Current by Finite Element Modelling

A three-dimensional finite element models for phase change random access memory （PCRAM） is established to simulate thermal and electrical behaviours during RESET operation. The RESET behaviours of the conventional structure （CS） and the ring-type contact in bottom electrode （RIB） are compared with each other. The simulation results indicate that the RIB cell has advantages of high heat efficiency for melting phase change material in cell, reduction of contact area and lower RESET current with maintaining good resistance contrast. The RESET current decreases from 1.26mA to 1.2mA and the heat consumption in CST material during programming increases from 12% to 37% in RIB structure. Thus the RIB structure PCRAM cell is suitable for future device with high heat efficiency and smaller RESET current.     

氮肥管理对夏玉米土壤CH4和N2O排放的影响

通过设置四个不同的氮肥管理措施, 即氮肥施用量300 kg N/ha (N300)和250 kg N/ha (N250)、改进的施肥模式(Optimized)以及施用缓释肥(SRU), 研究华北平原夏玉米生长季土壤与大气之间CH₄和N₂O的交换通量及相应措施的减排潜力. 结果表明, 在2008年整个夏玉米生长季, 土壤都是大气CH₄的净吸收库和N₂O的排放源. 夏玉米生长季土壤氧化吸收的CH₄总量从大到小依次为Optimized > N250 > SRU > N300, 对应的吸收总量依次为624.16、590.07、487.89以及316.02 g CH₄-C/ha, 各处理间氧化吸收的CH₄总量无显著差异. 与N300和N250这两个处理相比, 依据夏玉米对氮肥的需肥规律以及玉米根层土壤速效氮的供给能力而确定氮肥施用量, 同时再平衡施用磷肥和钾肥的改进施肥模式能够显著降低夏玉米生长季N₂O的排放. 施用聚乙烯包膜的尿素也能够显著降低夏玉米季N₂O的排放. 夏玉米生长季土壤排放的N₂O总量从大到小依次为N300 > N250 > Optimized > SRU, 对应的排放总量依次为3462.18、2340.07、1680.00以及911.91 g N2O-N/ha, 相应的N₂O排放系数分别为1.15%、0.94%、0.91%以及0.30%.