Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature.The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method.A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained.The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations,as demonstrated in the electron backscattered diffraction.A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites,as indicated by energy dispersive X-ray spectroscopy.     

△(G)=4的Halin-图的邻强边染色

图G(V,E)的一正常k-边染色f称为G(V,E)的一k-邻强边染色(简称k-ASEC)当且仅当任意uv∈E(G)满足f[u]≠f[v],其中f[u]={f(uw)|uw∈E(G)},并称Xas(G)=min{k|存在G的一k-ASEC}为G的邻强边色数.本文研究了△(G)=4的Halin-图的邻强边染色,得到了如下结果对△(G)=4的Halin-图有△(G)=4≤Xas(G)≤△(G)+1=5.     

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method. A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy.     

Δ(G)=4的Halin-图的邻强边染色(英文)

图 G(V,E)的一正常 k-边染色 f称为 G(V,E)的一 k-邻强边染色 (简称 k- ASEC)当且仅当任意uv∈ E(G)满足 f[u]≠f[v],其中 f[u]={ f(uw) | uw∈ E(G) } ,并称 χ′as(G) =min{ k|存在 G的一 k- ASEC}为G的邻强边色数 .本文研究了 Δ(G) =4的 Halin-图的邻强边染色 ,得到了如下结果 :对 Δ(G) =4的 Halin-图有 Δ(G) =4≤ χ′as(G)≤ Δ(G) + 1=5 .