Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

制动速度对C/C-SiC复合材料摩擦磨损性能的影响

采用模拟刹车制动方法研究"温压-原位反应法"制备的C/C-SiC复合材料在不同制动速度下的摩擦磨损性能,分别用光学显微镜和扫描电子显微镜对摩擦表面及其磨屑形貌进行观察,用X射线衍射仪分析磨屑成分.结果表明:摩擦系数随制动速度提高先升高而后降低,在制动速度为10 m/s时达到最大值0.46,且当制动速度超过20 m/s时产生高频振动;随着制动速度提高,磨屑愈被碾磨变细,且磨损量随之增大,在制动速度为28 m/s时线性磨损量急剧升至8.75 μm;C/C-SiC复合材料在中等能载(1.5 kJ/cm2)条件下具有优良的摩擦磨损性能.