Growth and structure of epitaxial Pb1 − x Mn x Se(Ga) films

The growth and structure of Pb_{1 ? x} Mn _x Se (Ga) (N_Ga = 0.8 at %) films with thicknesses of 0.3–0.5 μm, grown on single-crystal PbSe_{1 ? x} S _x (100) substrates by molecular-beam epitaxy, have been studied. It is established that films grow in a face-centered cubic lattice with the (100) orientation, reproducing the substrate orientation. The optimal conditions for obtaining photosensitive epitaxial films with perfect crystal structure are determined (W _1/2 = 70–80″).