保温层结构对感应加热制备太阳能级多晶硅影响的数值模拟研究

定向凝固技术是制备太阳能级多晶硅的主要制备技术.在该技术路线之中,优化多晶铸锭炉的热场结构和控制硅熔体的对流形态是获得高品质多晶硅的有效途径之一.本文设计了三种热场保温层,通过分析不同保温层下坩埚内硅熔体的热场、流场、固液界面、氧含量等的变化,确定了优化的保温层结构.研究发现,在传统固化碳毡保温层中引入石墨层可以使多晶炉内形成两个“热源”,提高多晶炉的热效率,使其能耗降低了38.5;;在洛伦兹力的作用下硅熔体中仅存在一个上下贯通的涡流,有利于硅中杂质原子的挥发.同时,添加石墨保温层后固液界面的形状由“W”状转变为凹状,其上的氧含量有所降低,并且V/Gn值在整个固液界面范围内均大于临界值,可以有效抑制氧沉淀.可见,在感应加热多晶硅生长系统中,采用固化碳毡+石墨保温层时,有利于降低多晶硅的生产成本并提高多晶硅的品质.     

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.     

冷却速率对Al-30wt％Si合金初晶硅形貌和杂质的影响研究

合金法提纯是制备太阳能级多晶硅的工艺之一,在Al-Si合金提纯多晶硅工艺中,冷却速率对初晶硅的形貌和纯度都有重要的影响.本文对成分为Al-30wt;Si合金采用不同冷却速率进行处理,分析初晶硅的形貌以及杂质含量的变化.结果表明,随冷却速率的降低,初晶硅的长度和宽度逐渐增加,初晶硅收率逐渐增加,并且在较低冷却速率下,初晶硅晶粒的<111>择优生长更加明显.同时,冷却速率对初晶硅中的杂质含量产生了显著影响,在较低冷却速率下,杂质的去除率较高,并且有利于Ti和B杂质的去除.为了获得较高的收率和较好的杂质去除率,Al-30wt;Si合金杂凝固过程中的冷却速率应低于3℃/min.     

不同金属缓冲层对GaN薄膜的光学及电学性能的影响

本文以金属Ga和NH3为原料,Al、Ni和Fe为金属缓冲层,采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明,所有样品均为六方纤锌矿结构;样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672 nm红光发射峰;不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。     

Origin of the low formation energy of oxygen vacancies in CeO2

Oxygen vacancies play a crucial role in determining the catalytic properties of Ce-based catalysts, especially in oxidation reactions. The design of catalytic activity requires keen insight into oxygen vacancy formation mechanisms. In this work, we investigate the origin of oxygen vacancies in CeO₂ from the perspective of electron density {via} high-energy synchrotron powder x-ray diffraction. Multipole refinement results indicate that there is no obvious hybridization between bonded Ce and O atoms in CeO₂. Subsequent quantitative topological analysis of the experimental total electron density reveals the closed-shell interaction behavior of the Ce—O bond. The results of first-principles calculation indicate that the oxygen vacancy formation energy of CeO₂ is the lowest among three commonly used redox catalysts. These findings indicate the relatively weak bond strength of the Ce—O bond, which induces a low oxygen vacancy formation energy for CeO₂ and thus promotes CeO₂ as a superior catalyst for oxidation reactions. This work provides a new direction for design of functional metal oxides with high oxygen vacancy concentrations.     

半固态处理对Al-50wt;Si合金初晶硅形貌的影响研究

提高初晶硅的收率是Al-Si合金法制备太阳能级多晶硅的研究热点之一.本文对成分为Al-50wt; Si合金在580℃进行半固态热处理,分析初晶硅的形貌以及Al元素含量的变化.结果表明:随半固态处理时间的增加,初晶硅的尺寸逐渐增大,其原因是在熟化机制的作用下,尺寸为0.15～0.7 mm的初晶硅的含量显著增加,这一结果导致初晶硅的收率高于理论收率.同时,经过半固态热处理,片状初晶硅之间的富Al层容易酸洗去除,降低了初晶硅中的Al含量.     

苯酚与钠反应的实验改进

介绍了一种苯酚与钠反应的实验方案,验证“酚羟基活泼性大于醇羟基”。实验操作简便,现象持续明显,适用于课堂演示,有利于教学。     

不同金属缓冲层对GaN薄膜的光学及电学性能的影响

本文以金属Ga和NH₃为原料,Al、Ni和Fe为金属缓冲层,采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明,所有样品均为六方纤锌矿结构;样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672nm红光发射峰;不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。     

Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga2O3 substrate

We report the edge-defined-film-fed(EFG)-grown β-Ga₂O₃-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10⁴ at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10¹⁰ Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga₂O₃-based Schottky diode solar-blind photodetectors.     

超声波测距误差分析及校正研究

提高超声波测距性能是超声波测距技术研究的关键点;不同的超声波接收信号检测和处理技术会涉及到不同的硬件结构、软件实现复杂度,导致超声波测距性能差异,进而影响整个系统的定位性能;为提高定位系统的定位精度,针对特定的六元超声波阵列测距系统进行超声波阵列测距实验,对可能造成测距误差的误差源进行分析,并分别采用温度补偿法和最小二乘回归法对测量数据进行校正;实验结果表明,设计的网络节点测量距离能够达到15 m,且最小二乘校正模型的测量结果有效地减小了测距误差,提高了测距精度。